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US4479830A
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Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker
Assignee: Toshiba Corp
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Filing: 1983-01-31
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Granted: 1984-10-30
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Expires: 2003-01-31
Abstract
Abstract A method for manufacturing a semiconductor device is shown which includes a step of ion implanting an impurity into an impurity-region formation region of a semiconductor substrate. Before or after the ion implantation step, silicon ions are implanted in a dose of 1×10 13 to 1×10 15 /cm 2 into the impurity-region formation region and then the silicon ions so implanted are subjected to an activation treatment to form an epitaxial grown protrusion on the surface of the substrate. The protrusion is used as an alignment mark in the subsequent mask alignment step for photolithography.
Inventors
- 👤 Yutaka Koshino
- 👤 Jiro Ohshima
- 👤 Takashi Ajima
- 👤 Toshio Yonezawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P30/21; H10P30/212; H10W; H10W46/00; H10W46/501
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
88 words
In a method of manufacturing a semiconductor device which includes a step for ion-implanting an impurity into an impurity-region formation region of a silicon substrate, the method comprising: (1) ion-implanting silicon ions in a dose of 1×10 13 to 1×10 15 /cm 2 into the impurity-region formation region immediately before or immediately after said ion implantation step, (2) subjecting the implanted silicon ions to an activation treatment to form an epitaxially grown protrusion on the surface of the substrate, and (3) using said protrusion as an alignment mark.
Claim 2
Dependent Claim
88 words
In a method of manufacturing a semiconductor device which includes a step for ion-implanting an impurity into an impurity-region formation region of a silicon substrate, the method comprising: (1) ion-implanting silicon ions in a dose of 1×10 13 to 1×10 15 /cm 2 into the impurity-region formation region immediately before or immediately after said ion implantation step, (2) subjecting the implanted silicon ions to an activation treatment to form an epitaxially grown protrusion on the surface of the substrate, and (3) using said protrusion as an alignment mark.
Claim 3
Dependent Claim
20 words
A method according to claim 1, in which said dose of silicon ions is 1×10 14 to 5×10 14 .
Claim 4
Dependent Claim
18 words
A method according to claim 1, in which said ion implanted impurity is activated by said activation treatment.
Claim 5
Dependent Claim
22 words
A method according to claim 1, in which said protrusion is used as an alignment mark in the subsequent mask alignment step.
Claim 6
Dependent Claim
24 words
A method according to claim 1, in which said activation treatment is a heat treatment at a temperature range of 800° to 1,200° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-30 | 1988-04-30 | 1988-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-30 | 1992-04-30 | 1992-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-30 | 1996-04-30 | 1996-10-30 | $7700.00 | Window Closed / Lapsed |