US4467312A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor resistor device
Assignee: Toshiba Corp
•
Filing: 1981-11-24
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Granted: 1984-08-21
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Expires: 2001-11-24
Abstract
Abstract A semiconductor resistor device comprising a resistor region diffused in the surface area of a semiconductor substrate, resistor electrodes respectively ohmically contacted to the surface of the resistor region, and a protective layer coated on the surfaces of the resistor electrodes. A trimming electrode is provided which is ohmically contacted to the surface of the resistor region to alloy with the resistor and a hole is formed in that portion of the protective layer which faces the trimming electrode. Where laser pulses are emitted to the trimming electrode through the hole, the trimming electrode is alloyed with the resistor region to reduce the resistance of the resistor region.
Inventors
- 👤 Shigeru Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 00:52
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
84 words
A semiconductor resistor device which comprises: a semiconductor substrate; a semiconductor resistor region formed near the surface area of said semiconductor substrate, said resistor region including alloyed contact regions; conductive electrodes each ohmically in contact with the surface of said semiconductor region only at individual ones of said alloyed contact regions; and a trimming electrode ohmically in contact with the surface of said semiconductor region only at another of said alloyed contact regions between said electrodes for decreasing the resistance of said resistor regions.
Claim 2
Dependent Claim
84 words
A semiconductor resistor device which comprises: a semiconductor substrate; a semiconductor resistor region formed near the surface area of said semiconductor substrate, said resistor region including alloyed contact regions; conductive electrodes each ohmically in contact with the surface of said semiconductor region only at individual ones of said alloyed contact regions; and a trimming electrode ohmically in contact with the surface of said semiconductor region only at another of said alloyed contact regions between said electrodes for decreasing the resistance of said resistor regions.
Claim 3
Dependent Claim
44 words
The semiconductor resistor device according to claim 1, wherein the surfaces of said semiconductor region and conductive electrodes are covered with a protective layer and a hole is formed in that portion of said protective layer which faces the surface of said trimming electrode.
Claim 4
Dependent Claim
25 words
The semiconductor resistor device according to claim 1, wherein said trimming electrode is further alloyed with said semiconductor region when exposed to a laser beam.
Claim 5
Dependent Claim
74 words
A semiconductor resistor device which comprises: a semiconductor substrate; a semiconductor resistor region formed near the surface area of said substrate, said resistor region including alloyed contact regions; and conductive electrodes ohmically in contact with the surface of the semiconductor region only at individual ones of said alloyed contact regions, said contact regions being further alloyed by exposure of the conductive electrodes to a laser beam for decreasing the resistance of said resistor region.
Claim 6
Dependent Claim
74 words
A semiconductor resistor device which comprises: a semiconductor substrate; a semiconductor resistor region formed near the surface area of said substrate, said resistor region including alloyed contact regions; and conductive electrodes ohmically in contact with the surface of the semiconductor region only at individual ones of said alloyed contact regions, said contact regions being further alloyed by exposure of the conductive electrodes to a laser beam for decreasing the resistance of said resistor region.
Claim 7
Dependent Claim
22 words
The semiconductor resistor device according to claim 4, wherein said semiconductor region is diffused in the surface area of said semiconductor substrate.
Claim 8
Dependent Claim
28 words
The semiconductor resistor device according to claim 4, wherein said semiconductor region is a polycrystalline semiconductor layer deposited above said semiconductor substrate with an insulation layer interposed therebetween.
Claim 9
Dependent Claim
40 words
The semiconductor resistor device according to claim 4, wherein said semiconductor region is formed of silicon, and said conductive electrodes and trimming electrode are formed of a material selected from the group consisting of aluminum, aluminum alloy, platinum and titanium.
Claim 10
Dependent Claim
42 words
A device according to claim 8, wherein the surfaces of said semiconductor region and conductive electrodes are covered with a protective layer, and holes are formed in those portions of the protective layer which face the contact regions of said semiconductor region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-21 | 1988-02-20 | 1988-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-21 | 1992-02-20 | 1992-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-21 | 1996-02-20 | 1996-08-21 | $7700.00 | Window Closed / Lapsed |