Patent US4465550A successfully refreshed from Google Patents.
US4465550A
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Method and apparatus for slicing semiconductor ingots
Assignee: SAC Corp
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Filing: 1984-01-10
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Granted: 1984-08-14
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Expires: 2004-01-10
Abstract
Abstract A method and apparatus for slicing solid materials, such as silicon, germanium, glass, ceramics, gallium arsenide, etc. by reactive chemicals which are carried to the workpiece by a travelling flexible member such as a wire or cable. More particularly, the invention relates to a method and apparatus for slicing ingots of the above-mentioned substances into wafers for use in the fabrication of integrated circuit, solar cells and the like. The reactive chemical preferably is a molten salt which reacts with the semiconductive material, and the flexible member is preferably electrically conductive and heated by passing a current through such member to ensure that the salt is reactive only at the location of contact of such flexible member with the ingot being sliced.
Inventors
- 👤 Richard L. Lane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:31
CPC Classifications
C; C03; C03B; C03B33/00; C03B33/06; B; B26; B26F; B26F3/00; B26F3/06; B26F3/08; B26F3/12; B28; B28D; B28D5/00; B28D5/04; B28D5/045; C03C; C03C15/00; C30; C30B; C30B33/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
136 words
A method of slicing a crystalline ingot to form thin wafers therefrom comprising the steps of: moving a flexible metallic wire in relation to a kerf formed in said ingot during the slicing operation, depositing on said metallic wire a molten salt or mixture of salts capable of chemically reacting with the crystalline material to dissolve said material, and maintaining the temperature of the molten salt at least outside of the kerf below that at which molten salt reacts with the crystalline material of which the ingot is formed, heating said metallic wire to a sufficiently high temperature to ensure that said molten salt is chemically reactive in said kerf with said crystalline material, whereby said molten salt is conveyed to the kerf of the ingot by said flexible member and effects cutting of said ingot.
Claim 2
Independent Claim
136 words
A method of slicing a crystalline ingot to form thin wafers therefrom comprising the steps of: moving a flexible metallic wire in relation to a kerf formed in said ingot during the slicing operation, depositing on said metallic wire a molten salt or mixture of salts capable of chemically reacting with the crystalline material to dissolve said material, and maintaining the temperature of the molten salt at least outside of the kerf below that at which molten salt reacts with the crystalline material of which the ingot is formed, heating said metallic wire to a sufficiently high temperature to ensure that said molten salt is chemically reactive in said kerf with said crystalline material, whereby said molten salt is conveyed to the kerf of the ingot by said flexible member and effects cutting of said ingot.
Claim 3
Dependent Claim
24 words
A method of slicing a crystal ingot in accordance with claim 1, wherein said flexible member is heated by passing an electrical current therethrough.
Claim 4
Independent Claim
27 words
The method of claims 1 or 2 in which an oscillating movement along the direction of movement of said member is superimposed upon a translational movement thereof.
Claim 5
Dependent Claim
122 words
Apparatus for slicing crystal ingots into wafers, said apparatus comprising: means for moving a metallic wire in contact with said ingot in a direction substantially at right angles to the axis of the ingot, means for continuously coating said flexible member with a molten salt capable of reacting with and dissolving the material of said ingot; means for heating said metallic wire to a sufficiently high temperature to ensure that the molten salt will react with the material of the ingot within the kerf during the cutting operation but not so high as to cause the molten salt to react with the ingot material outside of the kerf, and means for continuously moving said ingot and said flexible member toward each other.
Claim 6
Dependent Claim
122 words
Apparatus for slicing crystal ingots into wafers, said apparatus comprising: means for moving a metallic wire in contact with said ingot in a direction substantially at right angles to the axis of the ingot, means for continuously coating said flexible member with a molten salt capable of reacting with and dissolving the material of said ingot; means for heating said metallic wire to a sufficiently high temperature to ensure that the molten salt will react with the material of the ingot within the kerf during the cutting operation but not so high as to cause the molten salt to react with the ingot material outside of the kerf, and means for continuously moving said ingot and said flexible member toward each other.
Claim 7
Dependent Claim
12 words
Apparatus in accordance with claim 4 wherein said flexible member is multistranded.
Claim 8
Dependent Claim
14 words
Apparatus in accordance with claim 4 wherein said flexible member contains fixed insoluble particles.
Claim 9
Dependent Claim
16 words
Apparatus in accordance with claim 4 wherein said molten salt contains inert solid and insoluble particles.
Claim 10
Dependent Claim
15 words
The apparatus of claim 4 in which said flexible member has a rough outer surface.
Claim 11
Dependent Claim
12 words
The apparatus of claim 4 in which said flexible member is knurled.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-14 | 1988-02-13 | 1988-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-14 | 1992-02-13 | 1992-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-14 | 1996-02-13 | 1996-08-14 | $7700.00 | Window Closed / Lapsed |