Method of etching materials containing silicon

Claim 3

The method in accordance with claim 1, in which melts with P 2 O 5 contents of between 12 and 23% are used to selectively etch Si 3 N 4 in the presence of SiO 2 and/or Si.

Claim 4

The method in accordance with claim 2 in which the etching is performed by means of a melt containing 15% P 2 O 5 at a temperature of 200°C.

Claim 5

The method in accordance with claim 1, in which melts with P 2 O 5 contents of between 23 and 64% are used to selectively etch SiO 2 in the presence of Si 3 N 4 and/or Si.

Claim 6

The method in accordance with claim 4, in which etching is performed by means of a melt containing 45% P 2 O 5 at a temperature of 203°C.

Claim 7

The method in accordance with claim 1 in which on each working day the melt is heated to the operating temperature, is kept constant at this temperature, is covered with a lid upon completion of work and is cooled down to room temperature.

Claim 8

The method in accordance with claim 1 in which the maximum temperature (T) chosen for etching is such that the approximate relation T(°C)=P(%).60°C/10% + 108° C exists with regard to a P 2 O 5 content (P) of the melt used at between 160° and 300°C.

Claim 9

In a method of etching to remove portions of a layer of a first silicon compound in which an etch mask of a second silicon compound is formed on said layer by overcoating said layer with said second silicon compound and removing portions of said second silicon compound to expose the underlying portions of said layer; the improvement which comprises etching said layer with a hot melt consisting essentially of P 2 O 5 and anhydrous H 3 PO 4 containing from about 12 to 64% by weight of melt of P 2 O 5 at a temperature ranging from 160° to 300°C which melt preferentially etches said first silicon compound but which etches said second silicon compound to a degree such that any residual second silicon compound, which was not removed from the portions of said layer to be etched in forming the etch mask, will be removed by the hot melt so that it does not interfere with the complete removal of said layer in the exposed areas.

Claim 10

In a method of etching to remove portions of a layer of a first silicon compound in which an etch mask of a second silicon compound is formed on said layer by overcoating said layer with said second silicon compound and removing portions of said second silicon compound to expose the underlying portions of said layer; the improvement which comprises etching said layer with a hot melt consisting essentially of P 2 O 5 and anhydrous H 3 PO 4 containing from about 12 to 64% by weight of melt of P 2 O 5 at a temperature ranging from 160° to 300°C which melt preferentially etches said first silicon compound but which etches said second silicon compound to a degree such that any residual second silicon compound, which was not removed from the portions of said layer to be etched in forming the etch mask, will be removed by the hot melt so that it does not interfere with the complete removal of said layer in the exposed areas.

Claim 11

The method in accordance with claim 8 in which melts with a P 2 O 5 content of between about 12 and 23% by weight are used to selectively etch a layer of Si 3 N 4 in the presence of a SiO 2 mask.

Claim 12

The method in accordance with claim 8 in which melts with a P 2 O 5 content of between about 23 and 64% by weight are used to selectively etch a layer of SiO 2 in the presence of a Si 3 N 4 mask.