US2809103A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of semiconductor elements
Assignee: GTE Sylvania Inc
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Filing: 1953-11-10
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Granted: 1957-10-08
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Expires: 1973-11-10
Abstract
No abstract record available.
Inventors
- 👤 Ben H Alexander
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:44
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; H10P50/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
36 words
THE METHOD OF PREPARING A GERMANIUM CRYSTAL FOR INCORPORATION INTO A SEMICONDUCTOR DEVICE INCLUDING THE STEPS OF SUCCESSIVELY ETCHING THE CRYSTAL IN MOLTEN SODIUM HYDROXIDE AND TREATING THE ETCHED CRYSTAL WITH AN AQUEOUS ETCHANT FOR GERMANIUM.
Claim 2
Independent Claim
36 words
THE METHOD OF PREPARING A GERMANIUM CRYSTAL FOR INCORPORATION INTO A SEMICONDUCTOR DEVICE INCLUDING THE STEPS OF SUCCESSIVELY ETCHING THE CRYSTAL IN MOLTEN SODIUM HYDROXIDE AND TREATING THE ETCHED CRYSTAL WITH AN AQUEOUS ETCHANT FOR GERMANIUM.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-10-07 | 1961-04-08 | 1961-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-10-07 | 1965-04-08 | 1965-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-10-07 | 1969-04-08 | 1969-10-08 | $7700.00 | Window Closed / Lapsed |