US4464455A
Expired / Lapsed
US
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Dry-developing negative resist composition
Assignee: Fujitsu Ltd
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Filing: 1982-06-07
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Granted: 1984-08-07
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Expires: 2002-06-07
Abstract
Abstract A dry-developing negative resist composition consisting of (a) a polymer of a monomer of the following formula I or II or a copolymer of a monomer of the following formula I with a monomer of the following formula II, ##STR1## in which R represents alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and (b) 1% to 70% by weight, based on the weight of the composition, of a silicone compound. A negative resist pattern can be formed on a substrate by a process comprising coating the substrate with the resist composition, exposing the resist layer to an ionizing radiation, subjecting the resist layer to a relief treatment, and developing a resist pattern on the substrate by treatment with gas plasma.
Inventors
- 👤 Yasuhiro Yoneda
- 👤 Kenroh Kitamura
- 👤 Jiro Naito
- 👤 Toshisuke Kitakohji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:25
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; G03F7/038; G03F7/075; G03F7/0755; G03F7/26; G03F7/36; Y; Y10; Y10S; Y10S430/00; Y10S430/143
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
152 words
A dry-developing negative resist composition consisting of (a) a polymer of a monomer of the following formula I or II or a copolymer of a monomer of the following formula I with a monomer of the following formula II, ##STR4## in which R represents an alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and (b) 1% to 70% by weight, based on the weight of the composition, of at least one silicon compound, wherein the silicon compound is selected from the group consisting of the compounds of the formulae III, IV, V, VI, and VII, ##STR5## in which each X represents methyl, phenyl, biphenyl, phenylamino, phenoxy, benzyl, cyano, vinyl or acetoxy, each Y represents hydrogen, hydroxy, azido, vinyl, methoxy, ethoxy, butoxy, phenoxy, halogen, benzyl, phenyl, methyl, t-butyl biphenyl or acetoxy, and each Z represents phenyl, hydroxy, vinyl, methoxy, ethoxy, butoxy, benzyl, methyl, t-butyl, phenoxy, halogen, biphenyl, acetoxy or 1,4-bis(hydroxydimethylsilyl)benzene.
Claim 2
Dependent Claim
152 words
A dry-developing negative resist composition consisting of (a) a polymer of a monomer of the following formula I or II or a copolymer of a monomer of the following formula I with a monomer of the following formula II, ##STR4## in which R represents an alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and (b) 1% to 70% by weight, based on the weight of the composition, of at least one silicon compound, wherein the silicon compound is selected from the group consisting of the compounds of the formulae III, IV, V, VI, and VII, ##STR5## in which each X represents methyl, phenyl, biphenyl, phenylamino, phenoxy, benzyl, cyano, vinyl or acetoxy, each Y represents hydrogen, hydroxy, azido, vinyl, methoxy, ethoxy, butoxy, phenoxy, halogen, benzyl, phenyl, methyl, t-butyl biphenyl or acetoxy, and each Z represents phenyl, hydroxy, vinyl, methoxy, ethoxy, butoxy, benzyl, methyl, t-butyl, phenoxy, halogen, biphenyl, acetoxy or 1,4-bis(hydroxydimethylsilyl)benzene.
Claim 3
Dependent Claim
27 words
A resist composition as claimed in claim 1, wherein the silicon compound is contained in the resist composition in an amount of 10% to 50% by weight.
Claim 4
Dependent Claim
42 words
A resist composition as claimed in claim 1, wherein the monomer of formula I is selected from methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, i-propyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate, t-butyl methacrylate, n-amyl methacrylate, n-hexyl methacrylate, benzyl methacrylate, phenyl methacrylate, and cyclohexyl methacrylate.
Claim 5
Dependent Claim
22 words
A resist composition as claimed in claim 1, wherein the monomer of formula II is selected from methylisopropenyl ketone and phenylisopropenyl ketone.
Claim 6
Dependent Claim
48 words
A resist composition as claimed in claim 1, 2, 3 or 4, wherein the silicon compound is selected from the group consisting of bis(p-biphenyl)diphenylsilane, bis(phenylamino)dimethyl-silane, t-butyldimethylchlorosilane, t-butyldiphenyl-chlorosilane, dibenzyldimethylsilane, dicyanodimethylsilane, diphenylsilanediol, tetraacetoxysilane, tetraphenoxysilane, tetraphenysilane, tribenzylchlorosilane, triphenylchlorosilane, triphenylethylsilane, triphenylfluorosilane, triphenylsilane, triphenylsilanol, triphenylsilylazido, triphenylvinylsilane, 1,2-dimethyl-1,1,2,2-tetraphenyl-disilane, 1,1,1-trimethyl-2,2,2-triphenyldisilane, 1,3-dimethyl-1,1,3,3-tetraphenyldisiloxane, 1,3-divinyl-1,1,3,3-tetraphenyldisiloxane, 1,3-ethoxy-1,1,3,3-tetraphenyldisiloxane and 1,1,5,5-tetraphenyl-1,3,3,5-tetramethyltrisiloxane.
Claim 7
Dependent Claim
100 words
A process for forming a negative resist pattern on a substrate, comprising coating the substrate with a resist composition as defined in any one of claims 1 to 4, exposing the resist layer to an ionizing radiation to form at least one other silicon compound having a vapor pressure that is lower than the vapor pressure of the original silicon compound, removing at least a part of the non-irradiated portion of said silicon compound by relief treatment and developing a negative resist pattern on the substrate by treatment with gas plasma to remove the non-irradiated portion of the resist composition.
Claim 8
Dependent Claim
23 words
A process as claimed in claim 6, wherein the radiation is selected from an electron beam, X-ray, ion beam, and deep ultraviolet radiation.
Claim 9
Dependent Claim
28 words
A process as claimed in claim 6, wherein the gas plasma is selected from oxygen plasma, argon gas plasma, mixed oxygen-argon gas plasma, and mixed oxygen-fluorine gas plasma.
Claim 10
Dependent Claim
20 words
A process as claimed in claim 6, wherein an intermediate layer is provided between the resist layer and the substrate.
Claim 11
Dependent Claim
23 words
A process as claimed in claim 9, wherein the intermediate layer is composed of polyvinyl carbazole, polystyrene, phenol resin, cyclized polyisoprene, or polyimide.
Claim 12
Dependent Claim
23 words
The composition of claim 1, 2, 3 or 4, wherein the monomer of formula II is selected from methylisopropenyl ketone and phenylisopropenyl ketone.
Claim 13
Dependent Claim
40 words
The composition of claim 1, 2, 3 or 4, each said polymer or copolymer of each said monomer having a molecular weight in the range from 8 to 45×10 4 and a dispersion in the range from 1.4 to 3.2.
Claim 14
Dependent Claim
40 words
The composition of claim 1, 2, 3 or 4, each said polymer and copolymer of each said monomer having a molecular weight in the range from 8 to 45×10 4 and a dispersion in the range from 1.4 to 3.2.
Claim 15
Dependent Claim
36 words
The composition of claim 11, each said polymer and copolymer of each said monomer having a molecular weight in the range from 8 to 45×10 4 and a dispersion in the range from 1.4 to 3.2.
Claim 16
Dependent Claim
34 words
The method of claim 6, including converting said further silicon compound in said irradiated portions of said resist composition, by exposure to a plasma, into a substance having a greater resistance to plasma etching.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-07 | 1988-02-06 | 1988-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-07 | 1992-02-06 | 1992-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-07 | 1996-02-06 | 1996-08-07 | $7700.00 | Window Closed / Lapsed |