EP0067067A2
Expired / Lapsed
EP
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Dry-developing negative resist composition
Assignee: Fujitsu Ltd
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Filing: 1982-06-08
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Granted: —
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Expires: 2002-06-08
Abstract
Abstract A dry-developing negative resist composition formed fo (a) a polymer of one or more monomers of the following formule I or II in which R represents alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and (b) 1 % to 70% by weight, based on the weight of the composition, of a silicon compound. A negative resist pattern can be formed on a substrate by a process comprising coating the substrate with the resist composition, exposing the resist layer to an ionizing radiation, subjecting the resist layer to a relief treatement, and developing a resist pattern on the substrate by treatement with gas plasma.
Inventors
- 👤 Yasuhiro Yoneda
- 👤 Kenroh Kitamura
- 👤 Jiro Naito
- 👤 Toshisuke Kitakohji
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 06:58
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; G03F7/038; G03F7/075; G03F7/0755; G03F7/26; G03F7/36; Y; Y10; Y10S; Y10S430/00; Y10S430/143
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
63 words
A dry-developing negative resist composition containing polymer characterised in that the polymer is a polymer of one or more monomers of the following formulae I or II in which R represents alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and the composition also contains 1 to 70% by weight, based on the weight of the composition, of a silicon compound.
Claim 2
Dependent Claim
63 words
A dry-developing negative resist composition containing polymer characterised in that the polymer is a polymer of one or more monomers of the following formulae I or II in which R represents alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and the composition also contains 1 to 70% by weight, based on the weight of the composition, of a silicon compound.
Claim 3
Dependent Claim
26 words
A resist composition as claimed in claim 1, wherein the silicon compound is contained in the composition in an amount of 10% to 50% by weight.
Claim 4
Dependent Claim
42 words
A resist composition as claimed in claim 1, wherein the monomer of formula I is selected from methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, i-propyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate, t-butyl methacrylate, n-amyl methacrylate, n-hexyl methacrylate, benzyl methacrylate, phenyl methacrylate, and cyclohexyl methacrylate.
Claim 5
Dependent Claim
22 words
A resist composition as claimed in claim 1, wherein the monomer of formula II is selected from methylisopropenyl ketone and phenylisopropenyl ketone.
Claim 6
Dependent Claim
84 words
A resist composition as claimed in claim 1, wherein the silicon compound is selected from the group consisting of the compounds of the formulae III, IV, V, VI, and VII, in which X each represents methyl, phenyl, biphenyl, phenylamino, phenoxy, benzyl, cyano, vinyl or acetoxy, Y each represents hydrogen, hydroxy, azido, vinyl, methoxy, ethoxy, butoxy, phenoxy, halogen, benzyl, phenyl, methyl, t-butyl biphenyl or acetoxy, and Z each represents phenyl, hydroxy, vinyl, methoxy, ethoxy, butoxy, bezyl, methyl, t-butyl, phenoxy, halogen, biphenyl or acetoxy, and 1,4--bis(hydroxydimethylsilyl)benzene.
Claim 7
Dependent Claim
50 words
A resist composition as claimed in claim 5, wherein the silicon compound is selected from the group consisting of bis(p-biphenyl)disphenylsilane, bis(phenylamino)dimethylsilane, t-butyldimethylchlorosilane, t-butyldiphenyl- chlorosilane, dibenzyldimethylsilane, dicyanodimethylsilane, diphenylsilanediol, tetraacetoxysilane, tetraphenoxysilane, tetraphenylsilane, tribenzylchlorosilane, triphenylchloro- silane, triphenylethylsilane, triphenylfluorosilane, triphenylsilane, triphenylsilanol, triphenylsiiylazido, triphenylvinylsilane, 1,2-dimethyl-1,1,2,2-tetraphenyl- disilane, 1,1,1-trimethyl-2,2,2-triphenyldisilane, 1,3-dimethyl-1,1,3,3-tetraphenyldisiloxane, 1,3-divinyl--1,1,3,3-tetraphenyldisiloxane, 1,3-ethoxy-1,1,3,3-tetra- phenyldisiloxane, 1,1,5,5-tetraphenyl-1,3,3,5-tetramethyl- trisiloxane, and 1,4-bis(hydroxydimethylsilyl)benzene.
Claim 8
Dependent Claim
57 words
A process for forming a negative resist pattern on a substrate, comprising coating the substrate with a resist composition as defined in any one of the preceding claims, exposing the resist layer to an ionizing radiation, subjecting the resist layer to a relief treatment, and developing a resist pattern on the substrate by treatment with gas plasma.
Claim 9
Dependent Claim
23 words
A process as claimed in claim 7, wherein the radiation is selected from an electron beam, X-ray, ion beam, and deep ultraviolet ray.
Claim 10
Dependent Claim
27 words
A process as claimed in claim 7, wherein the gas plasma is selected-from oxygen plasma, argon gas plasma, mixed oxygen-argon gas plasma, and mixed oxygen-fluorine gas plasma.
Claim 11
Dependent Claim
36 words
A process as claimed in claim 7, wherein an intermediate layer is provided between the resist layer and the substrate, the intermediate layer preferably being composed of polyvinyl carbazole, polystyrene, phenol resin, cyclised polyisoprene, or polyimide.
References Cited (Backward Citations)
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