Patent US4460434A successfully refreshed from Google Patents.
US4460434A
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Method for planarizing patterned surfaces
Assignee: Nokia Bell Labs
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Filing: 1983-04-26
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Granted: 1984-07-17
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Expires: 2003-04-26
Abstract
Abstract A method of planarizing a surface using ion beam milling at a non-normal angle of incidence that is useful in semiconductor device manufacture is described.
Inventors
- 👤 Leo F. Johnson
- 👤 Dawon Kahng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:00
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P95/00; H10P95/06; H10P95/062; H10P95/064
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
78 words
A method of device manufacturing comprising planarizing a pattern delineated material; said planarizing step comprising the steps of depositing a first layer comprising a first material on the surface of said pattern delineated material; the surface of said first material being substantially planar; and milling said surface with a particle beam at a non-normal angle of incidence and with a momentum whereby said first material and said material underneath said first material are eroded at substantially equal rates.
Claim 2
Independent Claim
78 words
A method of device manufacturing comprising planarizing a pattern delineated material; said planarizing step comprising the steps of depositing a first layer comprising a first material on the surface of said pattern delineated material; the surface of said first material being substantially planar; and milling said surface with a particle beam at a non-normal angle of incidence and with a momentum whereby said first material and said material underneath said first material are eroded at substantially equal rates.
Claim 3
Dependent Claim
14 words
A method as recited in claim 1 in which said particle beam comprises ions.
Claim 4
Dependent Claim
33 words
A method as recited in claim 2 comprising the further step of depositing a second layer comprising a second material, said second layer being between said first layer and said pattern delineated material.
Claim 5
Dependent Claim
14 words
A method as recited in claim 3 in which said first material is liquid-like.
Claim 6
Dependent Claim
15 words
A method as recited in claim 4 in which said first material comprises a resist.
Claim 7
Dependent Claim
18 words
A method as recited in claim 3 or 5 in which said patterned delineated material comprises a semiconductor.
Claim 8
Dependent Claim
13 words
A method as recited in claim 6 in which said semiconductor comprises silicon.
Claim 9
Dependent Claim
15 words
A method as recited in claim 7 in which said second material comprises a glass.
Claim 10
Dependent Claim
16 words
A method as recited in claim 8 in which said second material comprises SiO 2 .
Claim 11
Dependent Claim
15 words
A method as recited in claim 9 in which said second material further comprises phosphorus.
Claim 12
Dependent Claim
30 words
A method as recited in claim 9 in which the thickness of said material is at least as great as the depth of the recesses in said pattern delineated surface.
Claim 13
Dependent Claim
17 words
A method as recited in claim 6 comprising the further step of pattern delineating said planarized surface.
References Cited (Backward Citations)
US3860783A
Cited
US3990927A
Cited
US4292156A
Cited
US4214966A
Cited
US4377438A
Cited
US4385975A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-17 | 1988-01-16 | 1988-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-17 | 1992-01-16 | 1992-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-17 | 1996-01-16 | 1996-07-17 | $7700.00 | Window Closed / Lapsed |