Method of forming a shallow and high conductivity boron doped layer in silicon

Claim 1

A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of: implanting in the substrate with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×10 14 /cm 2 to 5×10 15 /cm 2 ; damaging the implanted area of the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×10 15 /cm 2 implanted at an energy of approximately 100 Kev; and annealing the substrate at a temperature in the range of approximately 675° C. to 900° C.

Claim 2

A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of: implanting in the substrate with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×10 14 /cm 2 to 5×10 15 /cm 2 ; damaging the implanted area of the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×10 15 /cm 2 implanted at an energy of approximately 100 Kev; and annealing the substrate at a temperature in the range of approximately 675° C. to 900° C.

Claim 10

A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of: implanting in the substrate with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×10 14 /cm 2 to 5×10 15 /cm 2 ; and then damaging the implanted area of the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×10 15 /cm 2 implanted at an energy of approximately 100 Kev at approximately room temperature; and then annealing the substrate at a temperature in the range of approximately 550° C. to 900° C.

Claim 11

A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of: implanting in the substrate with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×10 14 /cm 2 to 5×10 15 /cm 2 ; and then damaging the implanted area of the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×10 15 /cm 2 implanted at an energy of approximately 100 Kev at approximately room temperature; and then annealing the substrate at a temperature in the range of approximately 550° C. to 900° C.

Claim 12

A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of: implanting in the substrate with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×10 14 /cm 2 to 5×10 15 /cm 2 ; and then damaging the implanted area of the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×10 15 /cm 2 implanted at an energy of approximately 100 Kev at a temperature of approximately liquid nitrogen; and then annealing the substrate at a temperature in the range of approximately 675° C. to 900° C.

Claim 13

A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of: implanting in the substrate with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×10 14 /cm 2 to 5×10 15 /cm 2 ; and then damaging the implanted area of the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×10 15 /cm 2 implanted at an energy of approximately 100 Kev at a temperature of approximately liquid nitrogen; and then annealing the substrate at a temperature in the range of approximately 675° C. to 900° C.

Claim 14

A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of: damaging an area in the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×10 15 /cm 2 implanted at an energy of approximately 100 Kev at a temperature of approximately liquid nitrogen; and then implanting in the damaged area with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×10 14 /cm 2 to 5×10 15 /cm 2 ; and then annealing the substrate at a temperature in the range of approximately 600° C. to 900° C.

Claim 15

A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of: damaging an area in the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×10 15 /cm 2 implanted at an energy of approximately 100 Kev at a temperature of approximately liquid nitrogen; and then implanting in the damaged area with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×10 14 /cm 2 to 5×10 15 /cm 2 ; and then annealing the substrate at a temperature in the range of approximately 600° C. to 900° C.