Patent US4438450A successfully refreshed from Google Patents.
US4438450A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state device with conductors having chain-shaped grain structure
Assignee: Agere Systems LLC
•
Filing: 1981-12-07
•
Granted: 1984-03-20
•
Expires: 2001-12-07
Abstract
Abstract Aluminum electrically conducting patterns for integrated circuits are achieved with narrow lines and unexpectedly-high electromigration characteristics by making the crystal grains of the pattern into a chain-shaped structure with {111} orientation. A process for achieving the structure is also described.
Inventors
- 👤 Tan T. Sheng
- 👤 Ashok K. Sinha
- 👤 Sheila Vaidya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10P; H10P14/00; H10P14/40; H10P14/412
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
89 words
A solid state device including a first layer having a first surface and a pattern of electrically conducting lines thereon, each of said lines comprising a single layer of like material, each of said single layers comprising a succession of grains forming a chain-shaped structure, each of said grains extending from side to side and from top to bottom of the respective one of said single layers, said line having a length much greater than said width to permit the formation of a significantly long chain of grains therein.
Claim 2
Dependent Claim
89 words
A solid state device including a first layer having a first surface and a pattern of electrically conducting lines thereon, each of said lines comprising a single layer of like material, each of said single layers comprising a succession of grains forming a chain-shaped structure, each of said grains extending from side to side and from top to bottom of the respective one of said single layers, said line having a length much greater than said width to permit the formation of a significantly long chain of grains therein.
Claim 3
Dependent Claim
18 words
A solid state device in accordance with claim 1 wherein said grains are oriented in a {111} direction.
Claim 4
Dependent Claim
32 words
A solid state device in accordance with claim 2 wherein said first layer comprises SiO 2 and said pattern is made from a class of materials consisting of aluminum and aluminum alloys.
Claim 5
Dependent Claim
20 words
A solid state device in accordance with claim 3 wherein said SiO 2 layer is formed on a semiconductor substrate.
Claim 6
Dependent Claim
14 words
A solid state device in accordance with claim 4 wherein said substrate is silicon.
Claim 7
Dependent Claim
35 words
A solid state device in accordance with claim 1 wherein said pattern comprises a land and an active region and a plurality of said lines connected electrically in parallel between said land and active region.
References Cited (Backward Citations)
US2168135A
Cited
US3879840A
Cited
US3754168A
Cited
US3833842A
Cited
US3830657A
Cited
US3743894A
Cited
US4027326A
Cited
US4017890A
Cited
US4166279A
Cited
US4352239A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-20 | 1987-09-19 | 1988-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-20 | 1991-09-19 | 1992-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-20 | 1995-09-19 | 1996-03-20 | $7700.00 | Window Closed / Lapsed |