Patent US4415427A successfully refreshed from Google Patents.
US4415427A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film deposition by sputtering
Assignee: Osram Sylvania Inc
•
Filing: 1982-09-30
•
Granted: 1983-11-15
•
Expires: 2002-09-30
Abstract
Abstract The deposition of thin films is carried out by a co-sputtering cathode technique particularly suited for deposition of doped thin films on large area substrates. A relatively large planar magnetron sputtering apparatus having a rectangular (picture frame shaped) plasma region is provided to obtain efficient sputtering of the host material. A vacant center area defined by the plasma region is provided for diode sputtering of the dopant. In RF sputtering, co-excitation of the power source is desired to prevent RF mode beating.
Inventors
- 👤 Henry T. Hidler
- 👤 Lawrence L. Hope
- 👤 Ernest A. Davey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:44
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/3414; H01J37/3426; H01J37/3429; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; C23C14/352; H01J37/3402; H01J37/3405; H01J37/3408
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
92 words
A sputtering cathode apparatus for deposition of a doped thin film on a substrate which is moved relative to said apparatus, comprising; planar magnetron sputtering means including means defining a frame-shaped plasma area and having a host target material disposed in the magnetron plasma area, diode sputtering means disposed inside said framed area and out of the plasma sputtering area and comprising a dopant material, and means for electrically exciting said host target material and dopant material to provide co-deposition of said materials therby forming the doped thin film on the substrate.
Claim 2
Dependent Claim
92 words
A sputtering cathode apparatus for deposition of a doped thin film on a substrate which is moved relative to said apparatus, comprising; planar magnetron sputtering means including means defining a frame-shaped plasma area and having a host target material disposed in the magnetron plasma area, diode sputtering means disposed inside said framed area and out of the plasma sputtering area and comprising a dopant material, and means for electrically exciting said host target material and dopant material to provide co-deposition of said materials therby forming the doped thin film on the substrate.
Claim 3
Dependent Claim
18 words
A sputtering cathode apparatus as set forth in claim 1 wherein said host target material comprises zinc sulfide.
Claim 4
Dependent Claim
16 words
A sputtering cathode apparatus as set forth in claim 1 wherein said dopant material comprises manganese.
Claim 5
Dependent Claim
20 words
A sputtering cathode apparatus as set forth in claim 1 wherein said planar magnetron sputtering means comprises permanent magnet means.
Claim 6
Dependent Claim
26 words
A sputtering cathode apparatus as set forth in claim 1 wherein said means for electrically exciting comprises circuit means for co-exciting the host and dopant materials.
Claim 7
Dependent Claim
25 words
A sputtering cathode apparatus as set forth in claim 5 wherein said co-excited respective signals for the host and dopant materials are maintained in phase.
Claim 8
Dependent Claim
39 words
A sputtering cathode apparatus as set forth in claim 6 wherein the circuit means comprises an RF oscillator, RF amplifier means coupled from the RF oscillator and impedance matching means coupled from the RF amplifier means to each material.
Claim 9
Dependent Claim
27 words
A sputtering cathode apparatus as set forth in claim 7 wherein the RF amplifier means gain is controlled to control percentage to doping in doped thin film.
Claim 10
Dependent Claim
25 words
A sputtering cathode apparatus as set forth in claim 1 including means for electrically isolating said planar magnetron sputtering means and said diode sputtering means.
References Cited (Backward Citations)
US3530057A
Cited
US3878085A
Cited
US4166018A
Cited
US3956093A
Cited
US4025410A
Cited
US4094764A
Cited
US4180450A
Cited
US4303489A
Cited
US4194962A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-11-14 | 1987-05-16 | 1987-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-11-14 | 1991-05-16 | 1991-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-11-14 | 1995-05-16 | 1995-11-15 | $7700.00 | Window Closed / Lapsed |