US4415427A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film deposition by sputtering
Assignee: Osram Sylvania Inc
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Filing: 1982-09-30
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Granted: 1983-11-15
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Expires: 2002-09-30
Abstract
Abstract The deposition of thin films is carried out by a co-sputtering cathode technique particularly suited for deposition of doped thin films on large area substrates. A relatively large planar magnetron sputtering apparatus having a rectangular (picture frame shaped) plasma region is provided to obtain efficient sputtering of the host material. A vacant center area defined by the plasma region is provided for diode sputtering of the dopant. In RF sputtering, co-excitation of the power source is desired to prevent RF mode beating.
Inventors
- 👤 Henry T. Hidler
- 👤 Lawrence L. Hope
- 👤 Ernest A. Davey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:57
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/3414; H01J37/3426; H01J37/3429; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; C23C14/352; H01J37/3402; H01J37/3405; H01J37/3408
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
92 words
A sputtering cathode apparatus for deposition of a doped thin film on a substrate which is moved relative to said apparatus, comprising; planar magnetron sputtering means including means defining a frame-shaped plasma area and having a host target material disposed in the magnetron plasma area, diode sputtering means disposed inside said framed area and out of the plasma sputtering area and comprising a dopant material, and means for electrically exciting said host target material and dopant material to provide co-deposition of said materials therby forming the doped thin film on the substrate.
Claim 2
Dependent Claim
92 words
A sputtering cathode apparatus for deposition of a doped thin film on a substrate which is moved relative to said apparatus, comprising; planar magnetron sputtering means including means defining a frame-shaped plasma area and having a host target material disposed in the magnetron plasma area, diode sputtering means disposed inside said framed area and out of the plasma sputtering area and comprising a dopant material, and means for electrically exciting said host target material and dopant material to provide co-deposition of said materials therby forming the doped thin film on the substrate.
Claim 3
Dependent Claim
18 words
A sputtering cathode apparatus as set forth in claim 1 wherein said host target material comprises zinc sulfide.
Claim 4
Dependent Claim
16 words
A sputtering cathode apparatus as set forth in claim 1 wherein said dopant material comprises manganese.
Claim 5
Dependent Claim
20 words
A sputtering cathode apparatus as set forth in claim 1 wherein said planar magnetron sputtering means comprises permanent magnet means.
Claim 6
Dependent Claim
26 words
A sputtering cathode apparatus as set forth in claim 1 wherein said means for electrically exciting comprises circuit means for co-exciting the host and dopant materials.
Claim 7
Dependent Claim
25 words
A sputtering cathode apparatus as set forth in claim 5 wherein said co-excited respective signals for the host and dopant materials are maintained in phase.
Claim 8
Dependent Claim
39 words
A sputtering cathode apparatus as set forth in claim 6 wherein the circuit means comprises an RF oscillator, RF amplifier means coupled from the RF oscillator and impedance matching means coupled from the RF amplifier means to each material.
Claim 9
Dependent Claim
27 words
A sputtering cathode apparatus as set forth in claim 7 wherein the RF amplifier means gain is controlled to control percentage to doping in doped thin film.
Claim 10
Dependent Claim
25 words
A sputtering cathode apparatus as set forth in claim 1 including means for electrically isolating said planar magnetron sputtering means and said diode sputtering means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-11-14 | 1987-05-16 | 1987-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-11-14 | 1991-05-16 | 1991-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-11-14 | 1995-05-16 | 1995-11-15 | $7700.00 | Window Closed / Lapsed |