Self aligned aluminum polycrystalline silicon contact

Claim 2

In a semiconductor device having a pair of active regions of a first conductivity type embedded in a body of semiconductor material of a second conductivity type at the surface of the body; a channel region in the semiconductor body, at the surface thereof, separating the active regions; a gate member aligned with the channel region and separated from the semiconductor body by a layer of insulating material and contact means in ohmic contact with each of the active regions and the gate member respectively, the gate member comprising: a conductive layer of oxygen doped polycrystalline silicon.

Claim 3

The device of claim 1, wherein: the gate member is doped with the same conductivity modifiers as the active region.

Claim 4

The device of claim 1, wherein: the gate member is formed from the pyrolytic decomposition of SiH 4 in the presence of N 2 O; and the volumetric ratio of N 2 O:SiH 4 ranges from about 0.05 to about 0.20.

Claim 5

The device of claim 3, wherein: the body of semiconductor material is an island of silicon formed on an insulative substrate.

Claim 6

The device of claim 4, wherein: the insulative substrate is selected from the group consisting of sapphire, spinel and monocrystalline beryllium oxide.

Claim 7

The device of claim 3, wherein: the body of semiconductor material is bulk silicon.

Claim 8

In a semiconductor device having a pair of active regions of a first conductivity type embedded in a body of semiconductor material of a second conductivity type at the surface of the body; a channel region in the semiconductor body, at the surface thereof, separating the active regions; a gate member aligned with the channel region and separated from the semiconductor body by a layer of insulating material; and contact means in ohmic contact with each of the active regions and the gate member respectively, the improvement comprising: a conductive layer of oxygen doped polycrystalline silicon disposed over and insulated from the gate member; contact means in ohmic contact with each of the active regions; and contact means in ohmic contact with the oxygen doped polycrystalline silicon layer where the said layer overlies the channel region.

Claim 9

In a semiconductor device having a pair of active regions of a first conductivity type embedded in a body of semiconductor material of a second conductivity type at the surface of the body; a channel region in the semiconductor body, at the surface thereof, separating the active regions; a gate member aligned with the channel region and separated from the semiconductor body by a layer of insulating material; and contact means in ohmic contact with each of the active regions and the gate member respectively, the improvement comprising: a conductive layer of oxygen doped polycrystalline silicon disposed over and insulated from the gate member; contact means in ohmic contact with each of the active regions; and contact means in ohmic contact with the oxygen doped polycrystalline silicon layer where the said layer overlies the channel region.

Claim 10

The device of claim 7, wherein: the conductive layer of oxygen doped polycrystalline silicon is formed from the pyrolytic decomposition of SiH 4 in the presence of N 2 O; and the volumetric ratio of N 2 O:SiH 4 ranges from about 0.05 to about 0.20.

Claim 11

The device of claim 8, wherein: the body of semiconductor material is an island of silicon formed on an insulative substrate.

Claim 12

The device of claim 9, wherein: the insulative substrate is selected from the group consisting of sapphire, spinel and monocrystalline beryllium oxide.

Claim 13

The device of claim 8, wherein: the body of semiconductor material is bulk silicon.