Method of producing polycrystalline silicon components, particularly solar elements

Claim 1

In a method for producing semiconductor components, and in particular solar elements, wherein at least two layers of different conductivity types and a corresponding PN junction are formed in a P- or N-conducting semiconductor chip, the improvement comprising: subjecting said semiconductor chip to an oxidation at a temperature of 900° to 1150° C. prior to forming the PN junction such that the external surface and internal grain boundaries of said chip are covered with an oxide layer; removing partially the oxide layer from said external surface of said chip while the oxide layers at said grain boundaries are preserved intact; and, forming at least one PN junction in the semiconductor chip; wherein a portion of said oxide layer is retained at the edges of at least one external surface to cover at least one PN junction formed thereunder.