US4377734A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming patterns by plasma etching
Assignee: Mitsubishi Electric Corp
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Filing: 1980-10-09
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Granted: 1983-03-22
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Expires: 2000-10-09
Abstract
Abstract Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which has been rendered passive acts as a mask, and an etched pattern is formed.
Inventors
- 👤 Yoji Mashiko
- 👤 Hirozo Takano
- 👤 Haruhiko Abe
- 👤 Sotoju Asai
- 👤 Kazuo Mizuguchi
- 👤 Sumio Nomoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:53
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/30; H10P30/00; H10P30/40; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H10P50/73
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
122 words
A method of forming etched patterns on the surface of a workpiece comprising, providing a workpiece to be etched consisting of either polycrystalline silicon, or aluminum, or silicon dioxide, implanting the workpiece surface in a desired pattern with ions of a metal selected from the group consisting of tungsten, niobium and tin in preparation of conversion of portions of the workpiece having said ions in said pattern into a passivator during plasma etching under the presence of oxygen thereby to render said desired pattern on said surface unetchable during said etching, and without further preparation plasma etching the metal ion implanted workpiece with an etching gas mixed with oxygen appropriate to the metal selected, whereby said portions having said pattern remain unetched.
Claim 2
Independent Claim
122 words
A method of forming etched patterns on the surface of a workpiece comprising, providing a workpiece to be etched consisting of either polycrystalline silicon, or aluminum, or silicon dioxide, implanting the workpiece surface in a desired pattern with ions of a metal selected from the group consisting of tungsten, niobium and tin in preparation of conversion of portions of the workpiece having said ions in said pattern into a passivator during plasma etching under the presence of oxygen thereby to render said desired pattern on said surface unetchable during said etching, and without further preparation plasma etching the metal ion implanted workpiece with an etching gas mixed with oxygen appropriate to the metal selected, whereby said portions having said pattern remain unetched.
Claim 3
Dependent Claim
30 words
A method of forming patterns as claimed in claim 1, wherein the etching gas used in etching the workpiece is a gas comprising a mixture of CF 3 and oxygen.
Claim 4
Dependent Claim
44 words
A method of forming etched patterns as claimed in claim 1, wherein said workpiece is aluminum, said metal ions are the ions of a metal selected from said group consisting of tungsten, niobium and tin, and said plasma etching gas is CCl 4 .
Claim 5
Dependent Claim
47 words
A method of forming etched patterns as claimed in claim 1, wherein said workpiece is silicon dioxide, said metal ions are the ions of a metal selected from said group consisting of tungsten, niobium and tin, and said plasma etching gas is C 3 F 8 .
References Cited (Backward Citations)
US3915757A
Cited
US3808068A
Cited
US4108715A
Cited
US4057895A
Cited
US4074139A
Cited
US4092209A
Cited
US4093503A
Cited
DE2717400B1
Cited
US4243506A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-03-21 | 1986-09-20 | 1987-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-03-21 | 1990-09-20 | 1991-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-03-21 | 1994-09-20 | 1995-03-22 | $7700.00 | Window Closed / Lapsed |