US4092209A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon implanted and bombarded with phosphorus ions
Assignee: RCA Corp
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Filing: 1976-12-30
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Granted: 1978-05-30
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Expires: 1996-12-30
Abstract
Abstract A composition of matter produced by a process wherein silicon is bombarded by phosphorus ions and phosphorus ions are implanted therein. A method for rendering silicon substantially unetchable in a potassium hydroxide etchant by implanting phosphorus in the silicon by brombardment with phosphorus ions.
Inventors
- 👤 Alfred Charles Ipri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:32
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/204; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
66 words
A body of silicon having at least a portion of a surface thereof substantially unetchable by a potassium hydroxide etchant wherein said surface portion contains therein phosphorus ions in the amount of at least 1×10 16 ions per square centimeter which have been implanted in the body by bombarding said surface with the ions at a kinetic energy sufficient to implant the ions into the body.
Claim 2
Dependent Claim
66 words
A body of silicon having at least a portion of a surface thereof substantially unetchable by a potassium hydroxide etchant wherein said surface portion contains therein phosphorus ions in the amount of at least 1×10 16 ions per square centimeter which have been implanted in the body by bombarding said surface with the ions at a kinetic energy sufficient to implant the ions into the body.
Claim 3
Dependent Claim
14 words
The body of silicon of claim 1, wherein the silicon is a single crystal.
Claim 4
Dependent Claim
12 words
The body of silicon of claim 1, wherein the silicon is polycrystalline.
Claim 5
Independent Claim
53 words
A method for rendering a surface of silicon substantially unetchable by an anisotropic etchant comprising the steps of bombarding the silicon surface with at least approximately 1 × 10 16 ions per square centimeter of phosphor ions at a kinetic energy such as to implant said ions into the silicon below said surface.
Claim 6
Independent Claim
53 words
A method for rendering a surface of silicon substantially unetchable by an anisotropic etchant comprising the steps of bombarding the silicon surface with at least approximately 1 × 10 16 ions per square centimeter of phosphor ions at a kinetic energy such as to implant said ions into the silicon below said surface.
Claim 7
Dependent Claim
33 words
The method of claim 4, further comprising the step of selectively masking said surface prior to said bombardment so that the phosphorus ions are implanted into only the unmasked portions of the surface.
Claim 8
Dependent Claim
20 words
The method of claim 5, wherein the preselected kinetic energy is selected from the range 30 Kev to 200 Kev.
Claim 9
Dependent Claim
28 words
The method of claim 5 further comprising the step of selectively removing silicon surrounding the implanted silicon surface by the step of exposing said surface to said etchant.
Claim 10
Dependent Claim
13 words
The method of claim 7 wherein the etchant is a potassium hydroxide etchant.
Claim 11
Dependent Claim
23 words
The method of claim 8 wherein the etchant comprises 320 grams of potassium hydroxide, 320 milliliters of N-propanol and 1050 milliliters of water.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-05-29 | 1981-11-28 | 1982-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-05-29 | 1985-11-28 | 1986-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-05-29 | 1989-11-28 | 1990-05-30 | $7700.00 | Window Closed / Lapsed |