Suppression of parasitic sidewall transistors in locos structures

Claim 2

An improved process for forming, in a substrate, a recessed isolation oxide layer and a buried impurity layer beneath the oxide layer, comprising: forming a mask structure having a first, oxidation window and a second, implant window overlying the first window, the second window being wider than the first window for controlling the formation of the impurity layer such that the impurity layer spans the underside of the edge of the isolation oxide layer; forming the impurity layer by implanting the substrate via the second window; and forming the isolation oxide layer by oxidizing the substrate via the first window.

Claim 3

An improved process for forming in a substrate a recessed isolation oxide and a buried impurity layer beneath the oxide layer which spans the underside of the oxide layer, comprising: forming, in order, on the substrate a first, relatively thin silicon oxide layer, a silicon nitride layer, and a second, relatively thick silicon oxide layer; the second oxide layer being sufficiently thick to mask the substrate during ion implantation; forming a first window through the oxide layers and the nitride layer; enlarging the portion of the first window in the second oxide layer to form a second window, at least one edge of the second window lying at least about 1-2 microns outside the corresponding edge of the first window; implanting the substrate via the second window; and oxidizing the substrate in the presence of the first oxide layer and the nitride layer to form an isolation oxide layer over the impurity layer.

Claim 4

An improved process for forming in a substrate a recessed isolation oxide and a buried impurity layer beneath the oxide layer which spans the underside of the oxide layer, comprising: forming, in order, on the substrate a first, relatively thin silicon oxide layer, a silicon nitride layer, and a second, relatively thick silicon oxide layer; the second oxide layer being sufficiently thick to mask the substrate during ion implantation; forming a first window through the oxide layers and the nitride layer; enlarging the portion of the first window in the second oxide layer to form a second window, at least one edge of the second window lying at least about 1-2 microns outside the corresponding edge of the first window; implanting the substrate via the second window; and oxidizing the substrate in the presence of the first oxide layer and the nitride layer to form an isolation oxide layer over the impurity layer.

Claim 5

A process for forming in a substrate a recessed isolation oxide and a buried impurity layer which spans the length of the oxide, comprising: forming, in order, on the substrate a first, relatively thin silicon oxide layer, a silicon nitride layer, and a second, relatively thick silicon oxide layer; the second oxide layer being sufficiently thick to mask the substrate during ion implantation; forming a first window through the second oxide layer and the nitride layer by selectively etching the second oxide layer, then the nitride layer; selectively overetching the portion of the first window formed in the second oxide layer to form a second window in the second oxide layer, overlying the first window, the periphery of the second window being spaced at least about 1-2 microns outside the periphery of the first window; implanting the substrate via the second window to form the buried impurity layer; and oxidizing the substrate via the first window to form the isolation oxide layer over the impurity layer, the impurity layer spanning the underside of the isolation oxide layer.

Claim 6

A process for forming in a substrate a recessed isolation oxide and a buried impurity layer which spans the length of the oxide, comprising: forming, in order, on the substrate a first, relatively thin silicon oxide layer, a silicon nitride layer, and a second, relatively thick silicon oxide layer; the second oxide layer being sufficiently thick to mask the substrate during ion implantation; forming a first window through the second oxide layer and the nitride layer by selectively etching the second oxide layer, then the nitride layer; selectively overetching the portion of the first window formed in the second oxide layer to form a second window in the second oxide layer, overlying the first window, the periphery of the second window being spaced at least about 1-2 microns outside the periphery of the first window; implanting the substrate via the second window to form the buried impurity layer; and oxidizing the substrate via the first window to form the isolation oxide layer over the impurity layer, the impurity layer spanning the underside of the isolation oxide layer.

Claim 7

A process for forming an improved LOCOS isolation structure in a semiconductor substrate, comprising: oxidizing the substrate to form a first oxide layer thereon; depositing a nitride layer on the first oxide layer; depositing a second, relatively thick, implant-masking oxide layer over the nitride layer; forming a first window in the nitride layer by selectively etching the second oxide layer, then selectively etching the nitride layer; selectively etching the second oxide layer to form a second window, overlying the first window, in the second oxide layer, the edges of the second window being spaced laterally about 11/2 microns outside corresponding edges of the first window; implanting the substrate via the second window to form an impurity layer therein, the effective edges of the impurity layer being controlled by the second window and extending laterally past the edges of the first window; and oxidizing the substrate via the first window to form over the impurity layer an at-least-partially recessed oxide layer having sloping side walls, the spaced edges of the first and second masks causing the recessed oxide layer and the impurity layer, to be formed with the impurity layer spanning the side walls of the recessed oxide layer.

Claim 8

A process for forming an improved LOCOS isolation structure in a semiconductor substrate, comprising: oxidizing the substrate to form a first oxide layer thereon; depositing a nitride layer on the first oxide layer; depositing a second, relatively thick, implant-masking oxide layer over the nitride layer; forming a first window in the nitride layer by selectively etching the second oxide layer, then selectively etching the nitride layer; selectively etching the second oxide layer to form a second window, overlying the first window, in the second oxide layer, the edges of the second window being spaced laterally about 11/2 microns outside corresponding edges of the first window; implanting the substrate via the second window to form an impurity layer therein, the effective edges of the impurity layer being controlled by the second window and extending laterally past the edges of the first window; and oxidizing the substrate via the first window to form over the impurity layer an at-least-partially recessed oxide layer having sloping side walls, the spaced edges of the first and second masks causing the recessed oxide layer and the impurity layer, to be formed with the impurity layer spanning the side walls of the recessed oxide layer.

Claim 9

The process of claims 2, 3 or 4 wherein the first oxide layer, the nitride layer, and the second oxide layer are formed to respective thicknesses of about 0.05, 0.07, and 0.5 microns.