Patent US4373254A successfully refreshed from Google Patents.
US4373254A
Expired / Lapsed
US
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Method of fabricating buried contacts
Assignee: RCA Corp
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Filing: 1981-04-06
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Granted: 1983-02-15
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Expires: 2001-04-06
Abstract
Abstract A novel method for forming a buried contact wherein the area of the buried contact is preconditioned by being doped to thus preclude the formation of an undesirable junction surrounding the buried contact.
Inventors
- 👤 Martin A. Blumenfeld
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:57
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; Y; Y10; Y10S; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
113 words
A process for forming low resistance, ohmic contacts to a semiconductor body of a given conductivity type, the body having a layer of insulating material thereon, comprising the steps of: masking the semiconductor body to delineate an area within which the ohmic contact is to be formed, the delineated area being larger than the area of the ohmic contact; doping only the delineated area of the semiconductor body under the delineated area to an opposite conductivity type; removing a portion of the layer of insulating material in the delineated area to expose a portion of the underlying semiconductor body; and providing a conductive ohmic contact to the exposed portion of the semiconductor body.
Claim 2
Dependent Claim
113 words
A process for forming low resistance, ohmic contacts to a semiconductor body of a given conductivity type, the body having a layer of insulating material thereon, comprising the steps of: masking the semiconductor body to delineate an area within which the ohmic contact is to be formed, the delineated area being larger than the area of the ohmic contact; doping only the delineated area of the semiconductor body under the delineated area to an opposite conductivity type; removing a portion of the layer of insulating material in the delineated area to expose a portion of the underlying semiconductor body; and providing a conductive ohmic contact to the exposed portion of the semiconductor body.
Claim 3
Dependent Claim
22 words
The process of claim 1, wherein: the body of semiconductor material is an island of silicon epitaxially grown on an insulating substrate.
Claim 4
Dependent Claim
22 words
The process of claim 2, wherein the insulating substrate is selected from the group consisting of sapphire, monocrystalline beryllium oxide and spinel.
Claim 5
Dependent Claim
163 words
A process for forming a semiconductor device having low resistance ohmic contacts to active regions in a semiconductor body comprising the steps of: forming a semiconductor body of a given conductivity type; forming an insulating layer on the surface of the semiconductor body; masking the semiconductor body to delineate areas within which the ohmic contacts are to be formed, each delineated area being larger than the respective area of the ohmic contact to be formed therein; doping the delineated area to an opposite conductivity type; removing a portion of the insulating layer, within each delineated area, to expose an area of the surface of the semiconductor body to which ohmic contact may be made; providing a patterned layer of conductive material to define contact members on the contact areas and gate members; and implanting conductivity modifiers into the body of semiconductor material to produce opposite conductivity type active regions, the patterned layer of conductive material constituting a mask for defining the active regions.
Claim 6
Dependent Claim
163 words
A process for forming a semiconductor device having low resistance ohmic contacts to active regions in a semiconductor body comprising the steps of: forming a semiconductor body of a given conductivity type; forming an insulating layer on the surface of the semiconductor body; masking the semiconductor body to delineate areas within which the ohmic contacts are to be formed, each delineated area being larger than the respective area of the ohmic contact to be formed therein; doping the delineated area to an opposite conductivity type; removing a portion of the insulating layer, within each delineated area, to expose an area of the surface of the semiconductor body to which ohmic contact may be made; providing a patterned layer of conductive material to define contact members on the contact areas and gate members; and implanting conductivity modifiers into the body of semiconductor material to produce opposite conductivity type active regions, the patterned layer of conductive material constituting a mask for defining the active regions.
Claim 7
Dependent Claim
22 words
The process of claim 4, wherein: the body of semiconductor material is an island of silicon epitaxially grown on an insulating substrate.
Claim 8
Dependent Claim
22 words
The process of claim 5, wherein the insulating substrate is selected from the group consisting of sapphire, monocrystalline berryllium oxide and spinel.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-14 | 1986-08-16 | 1987-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-14 | 1990-08-16 | 1991-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-14 | 1994-08-16 | 1995-02-15 | $7700.00 | Window Closed / Lapsed |