US4225875A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Short channel MOS devices and the method of manufacturing same
Assignee: RCA Corp
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Filing: 1978-04-19
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Granted: 1980-09-30
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Expires: 1998-04-19
Abstract
Abstract A short channel MOS transistor and the method for fabricating same is described wherein the dopant concentrations of the source and drain regions are maintained at different levels of conductivity modifiers. The method described teaches first doping the source region while maintaining the drain region masked and then doping both the source and drain regions.
Inventors
- 👤 Alfred C. Ipri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:14
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/0323; H10D30/0327; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6717; H10D30/6729; H10D30/673
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
154 words
In an improved semiconductor device having a body of semiconductor material of a first conductivity type; first and second regions of an opposite conductivity type sharing a common boundary surface on the body of semiconductor material; a channel region of the first conductivity type, intermediate the first and second regions and sharing the common boundary surface; a layer of gate insulator positioned over the channel region; and a layer of conductive material positioned solely over the channel region on the layer of gate insulator, the layer of conductive material and gate insulator defining a gate member; the improvement comprising; discrete ohmic connections to the gate member, the first region and the second region; the first and second opposite conductivity regions having the same type of conductivity modifiers therein; and the first opposite conductivity region having a concentration of conductivity modifiers therein about two orders of magnitude higher than the second opposite conductivity type region.
Claim 2
Dependent Claim
154 words
In an improved semiconductor device having a body of semiconductor material of a first conductivity type; first and second regions of an opposite conductivity type sharing a common boundary surface on the body of semiconductor material; a channel region of the first conductivity type, intermediate the first and second regions and sharing the common boundary surface; a layer of gate insulator positioned over the channel region; and a layer of conductive material positioned solely over the channel region on the layer of gate insulator, the layer of conductive material and gate insulator defining a gate member; the improvement comprising; discrete ohmic connections to the gate member, the first region and the second region; the first and second opposite conductivity regions having the same type of conductivity modifiers therein; and the first opposite conductivity region having a concentration of conductivity modifiers therein about two orders of magnitude higher than the second opposite conductivity type region.
Claim 3
Dependent Claim
19 words
The improved semiconductor of claim 1, wherein: the first and second opposite conductivity regions are source and drain regions.
Claim 4
Dependent Claim
33 words
The improved semiconductor of claim 1, wherein: the body of semiconductor material is deposited on an insulative substrate, the substrate being selected from the group consisting of sapphire, spinel and monocrystalline beryllium oxide.
Claim 5
Dependent Claim
19 words
The improved semiconductor of claim 3, wherein: the first and second opposite conductivity regions are source and drain regions.
Claim 6
Dependent Claim
29 words
The improved semiconductor of claim 4 wherein the concentration of conductivity modifiers in the source region is about two orders of magnitude higher than that of the drain region.
References Cited (Backward Citations)
US4124933A
Cited
US4089712A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-09-30 | 1984-03-31 | 1984-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-09-30 | 1988-03-31 | 1988-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-09-30 | 1992-03-31 | 1992-09-30 | $7700.00 | Window Closed / Lapsed |