Patent US4370359A successfully refreshed from Google Patents.
US4370359A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication technique for junction devices
Assignee: AT&T Inc
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Filing: 1980-08-18
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Granted: 1983-01-25
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Expires: 2000-08-18
Abstract
Abstract A self-aligning technique is used to produce small area junctions such as small area Josephson junctions. A base layer having a thickness corresponding to one dimension of the junction is first deposited. An insulating material is then deposited from a source positioned so that the base layer itself masks its edge from the insulator being formed. This procedure coats the base layer with an insulator, but leaves an edge of this layer free of insulation. A junction is then completed on this uncoated edge.
Inventors
- 👤 Linus A. Fetter
- 👤 Richard E. Howard
- 👤 Evelyn L. Hu
- 👤 Lawrence D. Jackel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:50
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0912
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
140 words
A process for forming a junction device comprising the steps of depositing a first material layer, depositing an insulating material on a portion of said first material layer by impingement of a flux on said first material layer, and forming said junction device on an exposed portion of said first material layer characterized in that said junction device is formed on an edge of said first material layer by an edge aligning technique comprising the steps of positioning said first material layer relative to said flux such that the angle between said flux and said first material layer is smaller than the angle from the major surface of said first material layer to a line tangent to this layer at a point on the boundary line defining the extremity of the area where said insulating material is to be formed.
Claim 2
Dependent Claim
140 words
A process for forming a junction device comprising the steps of depositing a first material layer, depositing an insulating material on a portion of said first material layer by impingement of a flux on said first material layer, and forming said junction device on an exposed portion of said first material layer characterized in that said junction device is formed on an edge of said first material layer by an edge aligning technique comprising the steps of positioning said first material layer relative to said flux such that the angle between said flux and said first material layer is smaller than the angle from the major surface of said first material layer to a line tangent to this layer at a point on the boundary line defining the extremity of the area where said insulating material is to be formed.
Claim 3
Dependent Claim
14 words
The process of claim 1 wherein said first material layer comprises a Pb/In alloy.
Claim 4
Dependent Claim
45 words
The process of claim 1 wherein said edge aligning technique comprises employing a ballistic deposition technique wherein the source of said insulating material used in said ballistic deposition technique is positioned so that a straight line path between said edge and said source is absent.
Claim 5
Dependent Claim
14 words
The process of claim 3 wherein said ballistic deposition method is an evaporation method.
Claim 6
Dependent Claim
15 words
The process of claim 3 wherein said ballistic deposition method is a secondary ion method.
Claim 7
Dependent Claim
11 words
The process of claim 1 wherein said insulating material is Ge.
Claim 8
Dependent Claim
22 words
The process of claim 1 including the step of defining said first material layer with a suspended portion of a delineating material.
Claim 9
Dependent Claim
21 words
The process of claim 1 including the step of forming said junction by using a suspended portion of a resist material.
Claim 10
Dependent Claim
16 words
The process of claim 1 including the step of forming said junction by oxidizing said edge.
Claim 11
Dependent Claim
16 words
The process of claim 9 including the step of depositing a metal on said oxidized edge.
Claim 12
Dependent Claim
10 words
The process of claim 10 wherein said metal comprises lead.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-24 | 1986-07-26 | 1987-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-24 | 1990-07-26 | 1991-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-24 | 1994-07-26 | 1995-01-25 | $7700.00 | Window Closed / Lapsed |