Abstract Disclosed are superconductive barrier devices, comprising a gate region with a control line adjacent to the gate, which can perform cryogenic switching and logic functions. According to the various embodiments, the gate region may comprise a relatively thin superconductive layer separated by a very thin insulative layer from a relatively thick superconductive layer, a discontinuous superconductive layer separated by a thin insulative layer from a thick superconductive layer, a pair of superconductors separated by an insulating barrier thin enough to permit electron pair tunneling therethrough, or a granular superconductor wherein the grains are separated by an insulating barrier thin enough to permit electron pair tunneling therethrough. Also disclosed are superconductive barrier devices comprising granular superconductors which may be employed as millimeter or submillimeter radiation generators or detectors.
Inventors
👤 J Pierce
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-26 15:13
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0912
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
140 words
A method for forming a superconductive tunneling switching device comprising the steps of: a. depositing an electrical conductor upon one side of an insulating substrate to provide a control line; b. forming on the other side of said insulating substrate first and second non-abutting strips of superconductor in a line substantially perpendicular to said control line and positioned such that the depression formed between said non-abutting strips overlies said control line; and c. depositing oxiDized particles of a superconductor material in said depression to form a granular superconductive tunneling barrier gate region therein having superconductive particles separated by an oxide region sufficiently thin to permit electron pair tunneling therethrough, whereby a direct current applied to said control line generates magnetic flux around said gate region to switch it from an electron pair tunneling state to a single electron tunneling state.
Claim 2
Dependent Claim
74 words
The method of claim 2 wherein said step of forming first and second non-abutting strips comprise the steps of: a. forming a strip of superconductor on the other side of said insulating substrate to provide a gate line overlying and substantially perpendicular to said control line; and b. removing the portion of said gate line which directly overlies said control line to provide a depression in said gate line directly above said control line.
Claim 3
Dependent Claim
15 words
The method of claim 2 wherein said oxide regions are less than 40 A. thick.