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US4344985A
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Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
Assignee: Fairchild Semiconductor Corp
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Filing: 1981-03-27
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Granted: 1982-08-17
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Expires: 2001-03-27
Abstract
Abstract There is disclosed a method of forming a multi-layer passivant system including a layer of oxygen doped polycrystalline silicon over the semiconductor substrate. A layer of silicon dioxide is thermally grown over the oxygen doped polycrystalline silicon layer. If desired, layers of glass and an additional oxide layer can be formed over the thermally grown oxide.
Inventors
- 👤 Alvin M. Goodman
- 👤 Ming L. Tarng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
71 words
A method of forming a multi-layer passivation system on the surface of a semiconductor substrate, said method comprising: depositing an oxygen doped polycrystalline silicon layer on the surface of the substrate; and thermally growing a layer of oxide on the exposed surface of the oxygen doped polycrystalline silicon layer, the oxide layer extending partially into the thickness of the oxygen doped polycrystalline silicon layer, while simultaneously annealing the polycrystalline silicon layer.
Claim 2
Independent Claim
71 words
A method of forming a multi-layer passivation system on the surface of a semiconductor substrate, said method comprising: depositing an oxygen doped polycrystalline silicon layer on the surface of the substrate; and thermally growing a layer of oxide on the exposed surface of the oxygen doped polycrystalline silicon layer, the oxide layer extending partially into the thickness of the oxygen doped polycrystalline silicon layer, while simultaneously annealing the polycrystalline silicon layer.
Claim 3
Dependent Claim
46 words
A method in accordance with claim 1 wherein said oxygen doped polycrystalline silicon layer is deposited by heating the substrate to a temperature within a range of about 450° C. to about 800° C. and exposing said wafer to a mixture of nitrous oxide and silane.
Claim 4
Independent Claim
36 words
A method in accordance with claims 1 or 2 wherein the oxide layer is grown by raising the temperature of the wafer to at least about 900° C. and exposing the wafer to an oxidizing atmosphere.
Claim 5
Dependent Claim
13 words
A method in accordance with claim 3 wherein the oxidizing atmosphere is steam.
Claim 6
Dependent Claim
21 words
A method in accordance with claim 1 wherein a relatively thick glass layer is deposited over the thermally grown oxide layer.
Claim 7
Dependent Claim
16 words
A method in accordance with claim 5 wherein an oxide layer is formed over the glass.
Claim 8
Dependent Claim
22 words
A method in accordance with claim 1 wherein the oxide layer is grown to a thickness of at least about 2,000 Angstroms.
Claim 9
Dependent Claim
20 words
A method in accordance with claim 1 wherein the oxide layer is grown to a thickness of about 4,000 Angstroms.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-16 | 1986-02-15 | 1986-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-16 | 1990-02-15 | 1990-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-16 | 1994-02-15 | 1994-08-17 | $7700.00 | Window Closed / Lapsed |