US4194934A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of passivating a semiconductor device utilizing dual polycrystalline layers
Assignee: VARO-QUALITY SEMICONDUCTOR Inc
•
Filing: 1979-04-10
•
Granted: 1980-03-25
•
Expires: 1999-04-10
Abstract
Abstract A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and disposed overlying the base coat. The method of passivating a semiconductor device includes initial formation of a base layer of substantially undoped polycrystalline silicon from a controlled atmosphere of a silane material. This is advantageously followed by a deposition of oxygen-doped polycrystalline silicon in continuation of the atmosphere of silane material with the added introduction of a gaseous oxygen donor.
Inventors
- 👤 Theodore A. Blaske
- 👤 Ho Y. Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:11
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/416; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/141; H10W74/147; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/122; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
160 words
The method of making semiconductor devices which is characterized by the steps of: infusing a selected portion of the surface of a semiconductor body of monocrystalline substrate material with dopant material to form a diffusion layer having a boundary region with the parent substrate material, which boundary region acts as a semiconductor junction; preparing the junction region of said body to receive a passivation coating; exposing said prepared semiconductor body to an atmosphere consisting essentially of an inert gas and a silane material at a selected, elevated temperature whereby to deposit a base layer of essentially undoped polycrystalline silicon over the region of said junction region; and thereafter introducing a gaseous oxygen donor into said atmosphere in continuation of the presence of inert gas and silane material whereby to deposit a top layer of oxygen-doped polycrystalline silicon over said base layer and form a dual-layer passivation coating, wherein said top layer contains less than about 30% by weight of oxygen.
Claim 2
Independent Claim
160 words
The method of making semiconductor devices which is characterized by the steps of: infusing a selected portion of the surface of a semiconductor body of monocrystalline substrate material with dopant material to form a diffusion layer having a boundary region with the parent substrate material, which boundary region acts as a semiconductor junction; preparing the junction region of said body to receive a passivation coating; exposing said prepared semiconductor body to an atmosphere consisting essentially of an inert gas and a silane material at a selected, elevated temperature whereby to deposit a base layer of essentially undoped polycrystalline silicon over the region of said junction region; and thereafter introducing a gaseous oxygen donor into said atmosphere in continuation of the presence of inert gas and silane material whereby to deposit a top layer of oxygen-doped polycrystalline silicon over said base layer and form a dual-layer passivation coating, wherein said top layer contains less than about 30% by weight of oxygen.
Claim 3
Dependent Claim
13 words
A method according to claim 1 wherein said oxygen donor is nitrous oxide.
Claim 4
Dependent Claim
12 words
A method according to claim 1 wherein said silane material is monosilane.
References Cited (Backward Citations)
SE300472B
Cited
US3859127A
Cited
US3977019A
Cited
US3971061A
Cited
US4001873A
Cited
US4014037A
Cited
US4002512A
Cited
US4080619A
Cited
US4086613A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-03-25 | 1983-09-24 | 1984-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-03-25 | 1987-09-24 | 1988-03-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-03-25 | 1991-09-24 | 1992-03-25 | $7700.00 | Window Closed / Lapsed |