US4063275A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with two passivating layers
Assignee: Sony Corp
•
Filing: 1975-10-22
•
Granted: 1977-12-13
•
Expires: 1995-10-22
Abstract
Abstract A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si 3 N 4 , Al 2 O 3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed.
Inventors
- 👤 Takeshi Matsushita
- 👤 Hisao Hayashi
- 👤 Teruaki Aoki
- 👤 Hidenobu Mochizuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:17
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/147; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10P14/68; H10P14/683; H10P14/69; H10P14/6903; H10W74/137; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6342; H10P14/668; H10P14/6681; H10P14/6682; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6928; H10P14/6929; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S257/00; Y10S257/905
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
103 words
A semiconductive device comprising a semiconductive single crystal substrate; a first passivating layer of polycrystalline silicon containing oxygen in the range between 2 and 45 atomic percent on and having a first surface in substantial electrical contact with a first surface of said substrate, a second passivating layer which is selected from the group consisting of polycrystalline silicon containing nitrogen, Si 3 N 4 , Al 2 O 3 and silicone resin on and having a first surface in contact with a second surface of said first passivating layer and said first and second surfaces of said first passivating layer being substantially parallel.
Claim 2
Dependent Claim
103 words
A semiconductive device comprising a semiconductive single crystal substrate; a first passivating layer of polycrystalline silicon containing oxygen in the range between 2 and 45 atomic percent on and having a first surface in substantial electrical contact with a first surface of said substrate, a second passivating layer which is selected from the group consisting of polycrystalline silicon containing nitrogen, Si 3 N 4 , Al 2 O 3 and silicone resin on and having a first surface in contact with a second surface of said first passivating layer and said first and second surfaces of said first passivating layer being substantially parallel.
Claim 3
Dependent Claim
28 words
A semiconductive device according to claim 1, wherein at least one junction is formed in said semiconductive single crystal substrate and said junction is reverse biased during operation.
Claim 4
Dependent Claim
30 words
A semiconductive device according to claim 2, wherein said first passivating layer and said second passivating layer are formed so as to cover a depletion layer extending from said junction.
Claim 5
Dependent Claim
99 words
A semiconductive device comprising an emitter region; a base region; a collector region; and forming a junction between said base region and collector region; and a first passivating layer of polycrystalline silicon containing oxygen in the range of between 2 to 45 atomic percent having a first surface on and in substantial electrical contact with the exposed portion of said junction and a second passivating layer which is selected from the group consisting of polycrystalline silicon containing nitrogen, Si 3 N 4 , Al 2 O 3 and silicone resin on a second surface of said first passivating layer.
Claim 6
Dependent Claim
99 words
A semiconductive device comprising an emitter region; a base region; a collector region; and forming a junction between said base region and collector region; and a first passivating layer of polycrystalline silicon containing oxygen in the range of between 2 to 45 atomic percent having a first surface on and in substantial electrical contact with the exposed portion of said junction and a second passivating layer which is selected from the group consisting of polycrystalline silicon containing nitrogen, Si 3 N 4 , Al 2 O 3 and silicone resin on a second surface of said first passivating layer.
Claim 7
Dependent Claim
89 words
A semiconductive device comprising a semiconductive single crystal substrate; a first passivating layer of polycrystalline silicon containing oxygen in the range of 2 to 45 atomic percent on and having a first surface in substantial contact with a first surface of said substrate, a second passivating layer of polycrystalline silicon containing nitrogen of more than 10 atomic percent on and having a first surface in contact with a second surface of said first passivating layer and said first and second surfaces of said first passivating layer being substantially parallel.
Claim 8
Dependent Claim
89 words
A semiconductive device comprising a semiconductive single crystal substrate; a first passivating layer of polycrystalline silicon containing oxygen in the range of 2 to 45 atomic percent on and having a first surface in substantial contact with a first surface of said substrate, a second passivating layer of polycrystalline silicon containing nitrogen of more than 10 atomic percent on and having a first surface in contact with a second surface of said first passivating layer and said first and second surfaces of said first passivating layer being substantially parallel.
Claim 9
Dependent Claim
125 words
A semiconductive device comprising a semiconductive single crystal substrate, a first passivating layer of polycrystalline silicon containing oxygen in the range of 2 to 45 atomic percent on and having a first surface in substantial electrical contact with a first surface of said substrate, a second passivating layer of polycrystalline silicon containing nitrogen of more than 10 atomic percent formed on and having a first surface in contact with a second surface of said first passivating layer, said first and second surfaces of said first passivating layer being substantially parallel and a silicon dioxide layer on and having a first surface in contact with a second surface of said second passivating layer, said first and second surfaces of said second passivating layer being substantially parallel.
Claim 10
Dependent Claim
125 words
A semiconductive device comprising a semiconductive single crystal substrate, a first passivating layer of polycrystalline silicon containing oxygen in the range of 2 to 45 atomic percent on and having a first surface in substantial electrical contact with a first surface of said substrate, a second passivating layer of polycrystalline silicon containing nitrogen of more than 10 atomic percent formed on and having a first surface in contact with a second surface of said first passivating layer, said first and second surfaces of said first passivating layer being substantially parallel and a silicon dioxide layer on and having a first surface in contact with a second surface of said second passivating layer, said first and second surfaces of said second passivating layer being substantially parallel.
References Cited (Backward Citations)
US3419746A
Cited
US3440477A
Cited
US3649886A
Cited
US3558348A
Cited
US3615913A
Cited
US3649884A
Cited
US3878549A
Cited
US3900350A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-12 | 1981-06-13 | 1981-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-12 | 1985-06-13 | 1985-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-12 | 1989-06-13 | 1989-12-13 | $7700.00 | Window Closed / Lapsed |