Use of dispersed solids as fillers in polymeric materials to provide material for semiconductor junction passivation

Claim 2

A rutile filled polymer system for use as a surface coating to prevent surface breakdown of semiconductor devices comprising rutile and a precursor solution of a polymer material which is one selected from the class of materials consisting of (a) a reaction product of a silicon-free organic diamine and an organic tetracarboxylic acid dianhydride which when cured is a polymer having the recuring structural units of the formula, ##STR12## (b) a reaction product of a silicon-free organic diamine, an organic tetracarboxylic acid dianhydride and an amino terminated polysiloxane, which is a polymer which, when cured, has the recuring structural units of formula (I) with from 15 to 45 mol percent intercondensed structural units of the formula, ##STR13## and (c) a blend of polyimide compound of formula (I) above with from 15 to 45 mole percent of the polyimide of formula (II) above wherein the maximum weight of rutile solids which can be used in the rutile filled polymer system to provide a cured void free polymer is expressed by the formula, ##EQU2## wherein: Ws is the weight of rutile, Wps is the weight of polymer solution (precursor) and WFp is the weight fraction of polymer in the precursor solution, R is a divalent hydrocarbon radical derived from bis(γ-amino propyl)tetramethyldisiloxane; R' is a monovalent hydrocarbon radical derived from bis(γ-amino propyl)tetramethyldisiloxane; R" is a tetravalent organic radical derived from benzophenone tetracarboxylic acid dianhydride; Q is a divalent silicon-free organic radical which is the residue of methylene dianiline; x is an integer having a value greater than zero, and m and n are integers greater than one, and may be equal to each other, and where the rutile is admixed therein and distributed throughout the precursor solution prior to the application of the solution to the surface of the semiconductor device.

Claim 3

The filled polymer system of claim 1, where the polymer material is the reaction product of a silicon-free organic diamine and an organic tetracarboxylic acid dianhydride.

Claim 4

The filled polymer system of claim 1, wherein the polymer material is the reaction product of a silicon-free organic diamine, an organic tetracarboxylic acid dianhydride and an amino terminated polysiloxane.

Claim 5

The filled polymer system of claim 1, wherein the polymer material is a blend of the reaction product of a silicon-free organic diamine and organic tetracarboxylic acid dianhydride and the reaction product of silicon-free organic diamine, an organic tetracarboxylic acid dianhydride and an amino-terminated polysiloxane.

Claim 6

A semiconductor device comprising a body of semiconductor material having at least two regions of opposite-type conductivity formed therein; a P-N junction disposed between, and formed by the abutting surfaces of each pair of regions of opposite-type conductivity; an end portion of at least one P-N junction exposed at a surface of the body, and a rutile filled polymer system for use as a surface coating to prevent surface breakdown of the device disposed on at least that surface at which the end portion of at least one P-N junction is exposed, and where the rutile filled polymer system comprises rutile, and a cured precursor solution of a polymer material which is one selected from the class of materials consisting of (a) a reaction product of a silicon-free organic diamine and an organic tetracarboxylic acid dianhydride which when cured is a polymer having the recurring structural units of the formula: ##STR14## (b) a reaction product of a silicon-free organic diamine, an organic tetracarboxylic acid dianhydride and an amino terminated polysiloxane, which is a polymer which, when cured, has the recurring structural units of formula (I) with from 14 to 45 mol percent intercondensed structural units of the formula: ##STR15## and (c) a blend of polyimide compound of formula (I) above with from 15 to 45 mole percent of the polyimide of formula (II) above wherein: R is a divalent hydrocarbon radical derived from bis(γ-amino propyl)tetramethyldisiloxane; R' is a monovalent hydrocarbon radical derived from bis(γ-amino propyl)tetramethyldisiloxane; R" is a trivalent organic radical derived from benzophenone tetracarboxylic acid dianhydride; Q is a divalent silicon-free organic radical which is the residue of methylene dianiline; x is an integer having a value greater than zero, and m and n are integers greater than one, and may be equal to each other, and where the rutile is admixed therein and distributed throughout the precursor solution prior to the application of the solution to the surface of the semiconductor device and where the maximum weight of rutile solids which can be used in the rutile filled polymer system to provide a cured void free polymer is expressed by the formula, ##EQU3## wherein: Ws is the weight of rulte, Wps is the weight of polymer solution (precursor) and WFp is the weight fraction of polymer in the precursor solution.

Claim 7

A semiconductor device comprising a body of semiconductor material having at least two regions of opposite-type conductivity formed therein; a P-N junction disposed between, and formed by the abutting surfaces of each pair of regions of opposite-type conductivity; an end portion of at least one P-N junction exposed at a surface of the body, and a rutile filled polymer system for use as a surface coating to prevent surface breakdown of the device disposed on at least that surface at which the end portion of at least one P-N junction is exposed, and where the rutile filled polymer system comprises rutile, and a cured precursor solution of a polymer material which is one selected from the class of materials consisting of (a) a reaction product of a silicon-free organic diamine and an organic tetracarboxylic acid dianhydride which when cured is a polymer having the recurring structural units of the formula: ##STR14## (b) a reaction product of a silicon-free organic diamine, an organic tetracarboxylic acid dianhydride and an amino terminated polysiloxane, which is a polymer which, when cured, has the recurring structural units of formula (I) with from 14 to 45 mol percent intercondensed structural units of the formula: ##STR15## and (c) a blend of polyimide compound of formula (I) above with from 15 to 45 mole percent of the polyimide of formula (II) above wherein: R is a divalent hydrocarbon radical derived from bis(γ-amino propyl)tetramethyldisiloxane; R' is a monovalent hydrocarbon radical derived from bis(γ-amino propyl)tetramethyldisiloxane; R" is a trivalent organic radical derived from benzophenone tetracarboxylic acid dianhydride; Q is a divalent silicon-free organic radical which is the residue of methylene dianiline; x is an integer having a value greater than zero, and m and n are integers greater than one, and may be equal to each other, and where the rutile is admixed therein and distributed throughout the precursor solution prior to the application of the solution to the surface of the semiconductor device and where the maximum weight of rutile solids which can be used in the rutile filled polymer system to provide a cured void free polymer is expressed by the formula, ##EQU3## wherein: Ws is the weight of rulte, Wps is the weight of polymer solution (precursor) and WFp is the weight fraction of polymer in the precursor solution.

Claim 8

The filled polymer system of claim 5, where the polymer material is the reaction product of a silicon-free organic diamine and an organic tetracarboxylic acid dianhydride.

Claim 9

The filled polymer system of claim 5, wherein the polymer material is the reaction product of a silicon-free organic diamine, an organic tetracarboxylic acid dianhydride and an amino terminated polysiloxane.

Claim 10

The filled polymer system of claim 5, wherein the polymer material is a blend of the reaction product of a silicon-free organic diamine and organic tetracarboxylic acid dianhydride and the reaction product of the silicon-free organic diamine, an organic tetracarboxylic acid dianhydride and an amino-terminated polysiloxane. cm 9. The semiconductor device of claim 5, wherein the semiconductor material is silicon.

Claim 11

The semiconductor device of claim 5, wherein the semiconductor material is silicon.