US4017340A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor element having a polymeric protective coating and glass coating overlay
Assignee: General Electric Co
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Filing: 1975-08-04
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Granted: 1977-04-12
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Expires: 1995-08-04
Abstract
Abstract A multilayer passivation-encapsulation for a semiconductor element is provided by a suitable polymer layer disposed on the device and overcoated with a glass layer for hermeticity.
Inventors
- 👤 Alexander J. Yerman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 12:10
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; H10D; H10D62/00; H10D62/10; H10D62/117; H10W74/10; H10W74/131; H10W74/137; H10W74/147; H10W74/40; H10W74/43; H10W74/47; H10W74/476
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
226 words
A semiconductor element comprising a body of semiconductor material having at least two regions of opposite type conductivity and a P-N junction disposed between, and formed by the abutting surfaces of, each pair of regions of opposite type conductivity; an end portion of at least one P-N junction exposed at a surface of the body; a layer of a protective coating material disposed on the exposed end portion of the at least one P-N junction, the protective coating material is a copolymer which is, when cured, one selected from the group consisting of the reaction product of a silicon-free organic diamine, an organic tetracarboxylic dianhydride and a polysiloxane diamine and a blend of polyimide compound of recurring structural units of the formula: ##STR9##with a polyimide composed of recurring structural units of the formula: ##STR10##wherein the molar proportion of the latter is from 5 to 50 mol percent, and a suitable solvent wherein R is a divalent hydrocarbon radical, R' is a monovalent hydrocarbon radical, R" is a tetravalent organic radical, Q is a divalent silicon-free organic radical which is the residue of an organic diamine, x is a whole number equal to at least 1, m is greater than 1, and n is greater than 1, and at least one layer of a chemical vapor deposited glass material disposed on the layer of protective coating material.
Claim 2
Dependent Claim
226 words
A semiconductor element comprising a body of semiconductor material having at least two regions of opposite type conductivity and a P-N junction disposed between, and formed by the abutting surfaces of, each pair of regions of opposite type conductivity; an end portion of at least one P-N junction exposed at a surface of the body; a layer of a protective coating material disposed on the exposed end portion of the at least one P-N junction, the protective coating material is a copolymer which is, when cured, one selected from the group consisting of the reaction product of a silicon-free organic diamine, an organic tetracarboxylic dianhydride and a polysiloxane diamine and a blend of polyimide compound of recurring structural units of the formula: ##STR9##with a polyimide composed of recurring structural units of the formula: ##STR10##wherein the molar proportion of the latter is from 5 to 50 mol percent, and a suitable solvent wherein R is a divalent hydrocarbon radical, R' is a monovalent hydrocarbon radical, R" is a tetravalent organic radical, Q is a divalent silicon-free organic radical which is the residue of an organic diamine, x is a whole number equal to at least 1, m is greater than 1, and n is greater than 1, and at least one layer of a chemical vapor deposited glass material disposed on the layer of protective coating material.
Claim 3
Dependent Claim
20 words
The semiconductor element of claim 1 wherein m is from 10 to 10,000 and n is from 10 to 10,000.
Claim 4
Dependent Claim
24 words
The semiconductor element of claim 1 wherein the coefficient of thermal expansion of the glass material approximates that of the material of the body.
Claim 5
Dependent Claim
26 words
The semiconductor element of claim 3 and including a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material.
Claim 6
Dependent Claim
23 words
The semiconductor element of claim 2 wherein the glass material is one selected from the group consisting of borosilicate glass and phosphosilicate glass.
Claim 7
Dependent Claim
20 words
The semiconductor element of claim 5 wherein m is from 10 to 10,000, and n is from 10 to 10,000.
Claim 8
Dependent Claim
26 words
The semiconductor element of claim 5 and including a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material.
Claim 9
Dependent Claim
20 words
The semiconductor element of claim 5 wherein the thickness of the glass material is from one micrometer to 10 micrometer.
Claim 10
Dependent Claim
16 words
The semiconductor element of claim 8 wherein the thickness of the glass material is 3 micrometers.
Claim 11
Dependent Claim
37 words
The semiconductor element of claim 9 and including a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material, and the thickness of the second layer of glass is 2000A.
Claim 12
Dependent Claim
26 words
The semiconductor element of claim 10 wherein the glass material is borosilicate and comprises from 15 to 25 mol percent of B 2 O 3 therein.
Claim 13
Dependent Claim
21 words
The semiconductor element of claim 11 wherein the glass material comprises 19 ± 2 mol percent B 2 O 3 .
Claim 14
Dependent Claim
12 words
The semiconductor element of claim 12 wherein the semiconductor material is silicon.
Claim 15
Dependent Claim
12 words
The semiconductor element of claim 10 wherein the semiconductor material is silicon.
Claim 16
Dependent Claim
26 words
The semiconductor element of claim 8 wherein the glass material is horosilicate and comprises from 15 to 25 mol percent of B 2 O 3 therein.
Claim 17
Dependent Claim
12 words
The semiconductor element of claim 15 wherein the semiconductor material is silicon.
Claim 18
Dependent Claim
20 words
The semiconductor element of claim 15 wherein m is from 10 to 10,000, and n is from 10 to 10,000.
Claim 19
Dependent Claim
21 words
The semiconductor element of claim 15 wherein the glass material comprises 19 ± 2 mol percent B 2 O 3 .
Claim 20
Dependent Claim
12 words
The semiconductor element of claim 18 wherein the semiconductor material is silicon.
Claim 21
Dependent Claim
40 words
The semiconductor element of claim 8 and including a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material, and the thickness of the second layer of glass is from 1000A to 5000A.
Claim 22
Dependent Claim
12 words
The semiconductor element of claim 20 wherein the semiconductor material is silicon.
Claim 23
Dependent Claim
26 words
The semiconductor element of claim 20 wherein the glass material is borosilicate and comprises from 15 to 25 mol percent of B 2 O 3 therein.
Claim 24
Dependent Claim
21 words
The semiconductor element of claim 22 wherein the glass material comprises 19 ± 2 mol percent B 2 O 3 .
Claim 25
Dependent Claim
12 words
The semiconductor element of claim 23 wherein the semiconductor material is silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-11 | 1980-10-11 | 1981-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-11 | 1984-10-11 | 1985-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-11 | 1988-10-11 | 1989-04-12 | $7700.00 | Window Closed / Lapsed |