US4328508A
Expired / Lapsed
US
⏱️ 0.0 years remaining
III-V Quaternary alloy photodiode
Assignee: RCA Corp
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Filing: 1979-04-02
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Granted: 1982-05-04
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Expires: 1999-04-02
Abstract
Abstract A III-V quaternary alloy photodiode comprises an n-type III-V binary alloy body; a III-V quaternary alloy layer chosen to have about the same lattice constant as that of said body grown on a major surface of said body; an electrically insulating layer grown on said quaternary alloy layer and having an opening therein extending through said second layer; a p-type layer of the same III-V binary alloy as said body, grown on said quaternary alloy layer in the area contiguous with the opening in said electrically insulating layer; a p-type region in said quaternary alloy layer in the region contiguous with the opening in said electrically insulating layer; and electrically conducting layers overlying a portion of said p-type binary alloy layer and of a second major surface of said body to provide electrical contact to the photodiode. The III-V quaternary alloy layer may be of n-type conductivity, electrically insulating, or have n-type and electrically insulating regions.
Inventors
- 👤 Henry Kressel
- 👤 Gregory H. Olsen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:01
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H10F30/225; H10F30/24; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
172 words
A photodiode which comprises: a body of an n-type III-V binary alloy having two opposed major surfaces; a first layer of a III-V quaternary alloy overlying a first major surface of said body wherein the lattice constant of said alloy is about the same as the lattice constant of said body; a second layer of an electrically insulating material, with an opening extending through said second layer, overlying said first layer; a third layer of the same III-V binary alloy as said first layer having a p-type dopant, overlying said first layer in the region defined by the opening in said second layer; a region of p-type conductivity in a portion of said first layer contiguous with the opening in said second layer; an electrically conducting layer overlying a portion of said third layer so as to form an electrical contact to said third layer; an electrically conducting layer overlying a portion of a second major surface of said body so as to form an electrical contact to said second major surface.
Claim 2
Dependent Claim
172 words
A photodiode which comprises: a body of an n-type III-V binary alloy having two opposed major surfaces; a first layer of a III-V quaternary alloy overlying a first major surface of said body wherein the lattice constant of said alloy is about the same as the lattice constant of said body; a second layer of an electrically insulating material, with an opening extending through said second layer, overlying said first layer; a third layer of the same III-V binary alloy as said first layer having a p-type dopant, overlying said first layer in the region defined by the opening in said second layer; a region of p-type conductivity in a portion of said first layer contiguous with the opening in said second layer; an electrically conducting layer overlying a portion of said third layer so as to form an electrical contact to said third layer; an electrically conducting layer overlying a portion of a second major surface of said body so as to form an electrical contact to said second major surface.
Claim 3
Dependent Claim
32 words
A photodiode according to claim 1 wherein said first layer is electrically insulating whereby a p-i-n heterojunction is formed by said p-type region, said electrically insulating first layer and said n-type body.
Claim 4
Dependent Claim
29 words
A photodiode according to claim 1 wherein said first layer is of n-type conductivity whereby a p-n homojunction is formed between said p-type region and said n-type first layer.
Claim 5
Dependent Claim
59 words
A photodiode according to claim 1 wherein said first layer is comprised of a region of n-type conductivity contiguous with and overlying said body and an electrically insulating region contiguous with and overlying said n-type conductivity region whereby a p-i-n homojunction is formed in said first layer by said p-type region, said electrically insulating region and said n-type region.
Claim 6
Dependent Claim
38 words
A photodiode according to claim 1 wherein said body is comprised of n-type InP, said first layer is comprised of In x Ga 1-x As y P 1-y , and said third layer is comprised of p-type InP.
Claim 7
Dependent Claim
24 words
A photodiode according to claim 5 wherein x varies from about 0.55 to about 1.00, and y varies from about 0.0 to about 1.0.
Claim 8
Dependent Claim
24 words
A photodiode according to claim 5 wherein x varies from about 0.70 to about 0.80, and y varies from about 0.50 to about 0.70.
Claim 9
Dependent Claim
36 words
A photodiode according to claim 1 wherein body is comprised of n-type GaAs, said first layer is comprised of In r Ga 1-r As s P 1-s and said third layer is comprised of p-type GaAs.
Claim 10
Dependent Claim
24 words
A photodiode according to claim 8 wherein r varies from about 0 to about 0.5, and s varies from about 0 to about 1.0.
Claim 11
Dependent Claim
37 words
A photodiode according to claim 1 wherein said body is comprised of n-type GaSb, said first layer is comprised of Al v Ga 1-v As z Sb 1-z and said third layer is comprised of p-type GaSb.
Claim 12
Dependent Claim
24 words
A photodiode according to claim 10 wherein v varies from about 0 to about 1.0, and z varies from about 0 to about 0.1.
Claim 13
Dependent Claim
28 words
A photodiode according to claim 1 wherein the insulating material of said second layer is selected from the group consisting of silicon dioxide, aluminum oxide, and silicon nitride.
Claim 14
Dependent Claim
20 words
A photodiode according to claim 1 wherein the p-type dopant of said third layer and said p-type region is zinc.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-03 | 1985-11-02 | 1986-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-03 | 1989-11-02 | 1990-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-03 | 1993-11-02 | 1994-05-04 | $7700.00 | Window Closed / Lapsed |