Avalanche photodiode
Abstract
Abstract AN AVALANCHE PHOTODIODE, PARTICULARLY USEFUL FOR DETECTION OF INFRARED ENERGY IN THE WAVELENGTH REGION FROM 1 TO 2 MICRONS, INCLUDES AN ACTIVE EPITAXIAL LAYER OF A QUATERNARY IIIV ALLOY SUCH AS N-IN-1-YGAYP1-XASX. THE ACTIVE LAYER INTERFACES WITH A SECOND LATTICE MATCHED EPITAXIAL LAYER OF P-TYPE JUNCTION AL TO DEFINE A LATTICE MATCHED P-N JUNCTION THEREBETWEEN WHICH IS REVERSED BIASED, IN USE. THE ACTIVE LAYER HAS A DIRECT BANDGAP ENERGY LESS THAN THE PHOTON ENERGY OF THE INFRARED ENERGY TO BE DECTED FOR ABSORPTION OF THE PHOTONS TO BE DETECTED TO GENERATED ELECTRON-HOLE PAIRS. THE ACTIVE ALYER IS MADE OF A MATERIAL HAVING AN ENERGY DIFFERENCE BETWEEN THE LOWEST CONDUCTION BAND MINIMUM BAND THE NEXT HIGHER CONDUCTION BAND MINIMA EITHER X1 OR L1 WHICH IS GREATER THAN 1.1 TIMER THE DIRECT BANDGAP ENERGY OF THE ACTIVE LAYER, WHEREBY IMPROVED SIGNAL TO NOISE RATIO IS OBTAINED.
Inventors
- 👤 L James
Bibliographic Details
Claims Analysis
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-06-27 | 1977-12-27 | 1978-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-06-27 | 1981-12-27 | 1982-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-06-27 | 1985-12-27 | 1986-06-28 | $7700.00 | Window Closed / Lapsed |