US4237471A
Expired / Lapsed
US
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Method of producing a semiconductor photodiode of indium antimonide and device thereof
Assignee: Hamamatsu TV Co Ltd
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Filing: 1979-06-22
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Granted: 1980-12-02
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Expires: 1999-06-22
Abstract
Abstract A method of producing semiconductor photodiodes of indium antimonide, by growing an indium antimonide epitaxial layer of one type conductivity onto a substrate of indium antimonide of another type conductivity, utilizing conventional vapor phase or liquid phase epitaxial techniques, wherein the antimony in the epitaxial layer is partially replaced by either arsenic or phosphorus, thus resulting in a high performing photoelectric device.
Inventors
- 👤 Dieter H. Pommerrenig
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 07:03
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; H10F71/00; H10F71/127; H10F71/1272; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
91 words
An infrared photodiode, comprising a substrate of indium antimonide of one type of conductivity; an epitaxial layer on said substrate of another type conductivity and of indium antimonide having the antimony partially replaced with arsenic or phosphorus and having the general formula InM x Sb i-x wherein M is arsenic or phosphorus, and "x" is between 0.01 to 0.05; and wherein said epitaxial layer forms the detecting surface for the detection of infrared radiation; an ohmic contact on said epitaxial layer; and an electrode connected directly or indirectly to said substrate.
Claim 2
Dependent Claim
91 words
An infrared photodiode, comprising a substrate of indium antimonide of one type of conductivity; an epitaxial layer on said substrate of another type conductivity and of indium antimonide having the antimony partially replaced with arsenic or phosphorus and having the general formula InM x Sb i-x wherein M is arsenic or phosphorus, and "x" is between 0.01 to 0.05; and wherein said epitaxial layer forms the detecting surface for the detection of infrared radiation; an ohmic contact on said epitaxial layer; and an electrode connected directly or indirectly to said substrate.
Claim 3
Dependent Claim
20 words
The device of claim 1, wherein said substrate is of n-type conductivity and said epitaxial layer is of p-type conductivity.
Claim 4
Dependent Claim
9 words
The device of claim 1, wherein x is 0.05.
Claim 5
Dependent Claim
12 words
The device of claim 1, wherein said photodiode is of planar configuration.
Claim 6
Dependent Claim
12 words
The device of claim 1, wherein said photodiode is of mesa configuration.
Claim 7
Dependent Claim
16 words
The device of claim 1, wherein a plurality of photodiodes are arranged in a multiple array.
References Cited (Backward Citations)
US3558373A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-02 | 1984-06-02 | 1984-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-02 | 1988-06-02 | 1988-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-02 | 1992-06-02 | 1992-12-02 | $7700.00 | Window Closed / Lapsed |