US4321284A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing method for semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1980-01-07
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Granted: 1982-03-23
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Expires: 2000-01-07
Abstract
Abstract A method for manufacturing semiconductor devices having a multi-layer wiring interconnection structure wherein a first interconnection wiring metal layer is formed on a semiconductor substrate followed by the formation of layers of silicon nitride on portions wherein patterns are to be placed and forming a layer of silicon oxide over the layer of silicon nitride. Selective portions of the silicon oxide layer are removed by lightly etching the layer to form recesses around the wiring portions of the metal layer. The silicon nitride layer is then removed and an insulating layer is formed on the surface from which the silicon nitride layer was removed. Through-holes are formed in predetermined portions of the insulating layer through which contact is made to a second wiring metal layer disposed over the insulating layer.
Inventors
- 👤 Hisao Yakushiji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:08
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/031; H10W20/063; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
142 words
A method for manufacturing a semiconductor device comprising the steps of: forming a first interconnection wiring metal layer an a semiconductor substrate; forming a silicon nitride layer only on wiring portions of said first wiring metal layer; selectively etching said metal layer to leave only said wiring portions on which said silicon nitride layer was formed; forming a silicon oxide layer on said silicon nitride layer and on said substrate adjacent said wiring portions; selectively removing only the silicon oxide layer overlying said metal wiring portions by etching; removing said silicon nitride layer; forming an insulating layer on a surface from which said silicon nitride layer was removed; forming through-holes in predetermined positions through said insulating layer; and forming a second wiring metal layer on said insulating layer, said second wiring metal connecting through said through-holes to said first wiring metal layer.
Claim 2
Independent Claim
142 words
A method for manufacturing a semiconductor device comprising the steps of: forming a first interconnection wiring metal layer an a semiconductor substrate; forming a silicon nitride layer only on wiring portions of said first wiring metal layer; selectively etching said metal layer to leave only said wiring portions on which said silicon nitride layer was formed; forming a silicon oxide layer on said silicon nitride layer and on said substrate adjacent said wiring portions; selectively removing only the silicon oxide layer overlying said metal wiring portions by etching; removing said silicon nitride layer; forming an insulating layer on a surface from which said silicon nitride layer was removed; forming through-holes in predetermined positions through said insulating layer; and forming a second wiring metal layer on said insulating layer, said second wiring metal connecting through said through-holes to said first wiring metal layer.
Claim 3
Dependent Claim
29 words
The method of claim 1 wherein said step of selectively removing said silicon oxide layer comprises: lightly etching said silicon oxide layer to form recesses around said wiring portions.
Claim 4
Dependent Claim
19 words
The method of claim 2 wherein said step of selectively etching comprises: chemical etching with a fluoric acid solution.
Claim 5
Independent Claim
43 words
The method of any of claims 1 to 3 wherein said metal layer is formed of a material selected from the group consisting of aluminum, alloys of aluminum including aluminum-silicon, aluminum-copper and aluminum-copper-silicon, tungsten, molybdenum, and alloys of tungsten and molybdenum including molybdenum-silicon.
Claim 6
Dependent Claim
28 words
The method according to claim 1, wherein said step of selectively removing said silicon oxide layer comprises removing only the silicon oxide layer overlying said metal wiring portions.
Claim 7
Dependent Claim
49 words
The method according to claim 1, wherein the steps of selectively removing said silicon oxide layer and removing said silicon nitride layer are performed by plasma etching to thereby lift off said silicon nitride layer and only the portion of said silicon oxide layer overlying said silicon nitride layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-03-22 | 1985-09-21 | 1986-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-03-22 | 1989-09-21 | 1990-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-03-22 | 1993-09-21 | 1994-03-23 | $7700.00 | Window Closed / Lapsed |