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US4274891A
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Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition
Assignee: International Business Machines Corp
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Filing: 1979-06-29
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Granted: 1981-06-23
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Expires: 1999-06-29
Abstract
Abstract A vertical pair of complementary, bipolar transistors is disclosed which includes a semiconductor substrate of one conductivity type and a pair of dielectric isolation regions disposed in contiguous relationship with the substrate. An injector region of opposite conductivity type is disposed between the pair of isolation regions. A pair of heavily doped, polycrystalline, semiconductor regions of the one conductivity type is disposed over and in registry with the pair of isolation regions. Similarly, a single crystal, semiconductor region of the one conductivity type is disposed over and in registry with the injector region. Finally, a first zone of opposite conductivity type is disposed in the single crystal region and a second zone of the one conductivity type is disposed in the first zone. In addition, a method of manufacturing a semiconductor device having vertical complementary, bipolar transistors is disclosed which includes the steps of forming regions of dielectric isolation which are contiguous with a semiconductor substrate and a region of semiconductor of one conductivity type therebetween, the semiconductor substrate being of opposite conductivity type; forming regions of heavily doped, polycrystalline semiconductor of the opposite conductivity type and a region of single crystal semiconductor of the opposite conductivity type in registry with the regions of dielectric isolation and the semiconductor region of one conductivity type, respectively. The method also includes the step of forming a zone of one conductivity type in the region of single crystal semiconductor and a zone of opposite conductivity type in the zone of one conductivity type.
Inventors
- 👤 Victor J. Silvestri
- 👤 Denny D. Tang
- 👤 Siegfried K. Wiedmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:28
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/411; G11C11/4113; H; H10; H10D; H10D84/00; H10D84/01; H10D84/0112; H10D84/0119; H10D84/0121; H10D84/02; H10D84/03; H10D84/038; H10D84/60; H10D84/65; H10D84/652; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; H10W20/00; H10W20/01; H10W20/021; Y; Y10; Y10S; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
158 words
A method of manufacturing a semiconductor device having vertical complementary bipolar transistors comprising the steps of: forming regions of dielectric isolation in contiguous relationship with a semiconductor substrate and a region of semiconductor of one conductivity type between said dielectric isolation regions said substrate being a semiconductor of opposite conductivity type, depositing a layer of semiconductor material of said opposite conductivity type on said regions of dielectric isolation and on said semiconductor region of one conductivity type to form polycrystalline regions and a single crystal region on said regions of dielectric isolation and on said region of one conductivity type, respectively, masking said single crystal region of opposite conductivity type, introducing a dopant of opposite conductivity type into said polycrystalline regions to render said polycrystalline regions conductive, and, forming a zone of said one conductivity type in said region of single crystal semiconductor and a zone of said opposite conductivity in said zone of said one conductivity type.
Claim 2
Independent Claim
158 words
A method of manufacturing a semiconductor device having vertical complementary bipolar transistors comprising the steps of: forming regions of dielectric isolation in contiguous relationship with a semiconductor substrate and a region of semiconductor of one conductivity type between said dielectric isolation regions said substrate being a semiconductor of opposite conductivity type, depositing a layer of semiconductor material of said opposite conductivity type on said regions of dielectric isolation and on said semiconductor region of one conductivity type to form polycrystalline regions and a single crystal region on said regions of dielectric isolation and on said region of one conductivity type, respectively, masking said single crystal region of opposite conductivity type, introducing a dopant of opposite conductivity type into said polycrystalline regions to render said polycrystalline regions conductive, and, forming a zone of said one conductivity type in said region of single crystal semiconductor and a zone of said opposite conductivity in said zone of said one conductivity type.
Claim 3
Dependent Claim
77 words
A method according to claim 1 wherein the step of forming regions of dielectric isolation and a region of semiconductor includes the steps of: masking said semiconductor substrate to expose at least two surface portions thereof, applying an etchant to said at least two surface portions to etch depressions in said substrate, filling said depressions with dielectric material, and, introducing a dopant into said substrate to form a region of said one conductivity type between said depressions.
Claim 4
Dependent Claim
125 words
A method according to claim 1 wherein the step of forming a zone of said one conductivity type in said region of single crystal semiconductor and a zone of said opposite conductivity in said zone of said one conductivity type includes the steps of: oxidizing said regions of heavily doped polycrystalline semiconductor and said region of single crystal semiconductor to form an oxide layer having thick portions over said polycrystalline regions and thin oxide over said single crystal region, etching said oxide layer to remove said thin oxide, and, introducing first and second dopants of said one conductivity type and said opposite conductivity type, respectively, into said region of single crystal semiconductor in sequence to form said zones in said region of single crystal semiconductor.
Claim 5
Dependent Claim
25 words
A method according to claim 1 wherein said semiconductor substrate is a silicon substrate and said regions of dielectric isolation are regions of silicon oxide.
Claim 6
Dependent Claim
18 words
A method according to claim 1 wherein said regions of dielectric isolation are regions of recessed semiconductor oxide.
Claim 7
Dependent Claim
21 words
A method according to claim 1 further including the step of applying contacts to said transistors to form an inverter circuit.
Claim 8
Dependent Claim
79 words
A method according to claim 1 where the step of forming regions of dielectric isolation and a region of semiconductor includes the steps of: forming a layer of dielectric isolation material on said substrate, removing a portion of said layer of dielectric isolation material to form dielectric isolation regions and expose a region of said semiconductor substrate, and, introducing a dopant into said substrate to form a region of said one conductivity type in said region of said substrate.
Claim 9
Dependent Claim
117 words
A method according to claim 1 wherein the step of forming a zone of said one conductivity type in said region of single crystal semiconductor and a zone of said opposite conductivity type in said zone of said one conductivity type includes the steps of: oxidizing said regions of heavily doped polycrystalline semiconductor and said region of single crystal semiconductor to form an oxide layer having thick portions over said polycrystalline regions and thin oxide over said single crystal region, and, introducing first and second dopants of said one conductivity type and said opposite conductivity type, respectively, into said region of single crystal semiconductor in sequence to form said zones in said region of single crystal semiconductor.
Claim 10
Dependent Claim
22 words
A method according to claim 2 wherein said dielectric material is one selected from the group consisting of silicon oxide, silicon nitride.
Claim 11
Dependent Claim
38 words
A method according to claim 2 wherein the step of filling said depressions with dielectric material includes the step of thermally oxidizing said substrate to regrow an oxide of the semiconductor from which said semiconductor substrate is made.
Claim 12
Dependent Claim
32 words
A method according to claim 2 wherein the step of introducing a dopant into said substrate includes the step of ion implanting a dopant of said one conductivity type into said substrate.
Claim 13
Dependent Claim
40 words
A method according to claim 1 wherein the step of depositing a layer of semiconductor material includes the step of depositing silicon by chemical vapor deposition in the presence of a dopant which renders said silicon of opposite conductivity type.
Claim 14
Dependent Claim
49 words
A method according to claim 1 wherein the step of introducing a dopant into said polycrystalline regions includes the steps of: masking said single crystal region, and, diffusing a dopant of said opposite conductivity type into said polycrystalline regions in an amount sufficient to render said polycrystalline regions conductive.
Claim 15
Dependent Claim
28 words
A method according to claim 4 wherein the step of oxidizing includes the step of thermally regrowing an oxide of said polycrystalline semiconductor and said single crystal semiconductor.
Claim 16
Dependent Claim
22 words
A method according to claim 8 wherein said dielectric material is one selected from the group consisting of silicon oxide, silicon nitride.
Claim 17
Dependent Claim
32 words
A method according to claim 8 wherein the step of introducing a dopant into said substrate includes the step of ion implanting a dopant of said one conductivity type into said substrate.
Claim 18
Dependent Claim
28 words
A method according to claim 9 wherein the step of oxidizing includes the step of thermally regrowing an oxide of said polycrystalline semiconductor and said single crystal semiconductor.
Claim 19
Independent Claim
160 words
A method of manufacturing a semiconductor device having a plurality of vertical complementary bipolar transistors comprising the steps of: forming regions of dielectric isolation in contiguous relationship with a semiconductor substrate and regions of semiconductor of one conductivity type between said dielectric isolation regions said substrate being a semiconductor of opposite conductivity type, depositing a layer of semiconductor material of said opposite conductivity type on said regions of dielectric isolation and on said semiconductor regions of one conductivity type to form polycrystalline regions and single crystal regions on said regions of dielectric isolation and on said regions of one conductivity type, respectively, masking said single crystal regions of opposite conductivity type, introducing a dopant of opposite conductivity type into said polycrystalline regions to render said polycrystalline regions conductive, and, forming a zone of said one conductivity type in each said region of single crystal semiconductor and a zone of said opposite conductivity in said zone of said one conductivity type.
Claim 20
Independent Claim
160 words
A method of manufacturing a semiconductor device having a plurality of vertical complementary bipolar transistors comprising the steps of: forming regions of dielectric isolation in contiguous relationship with a semiconductor substrate and regions of semiconductor of one conductivity type between said dielectric isolation regions said substrate being a semiconductor of opposite conductivity type, depositing a layer of semiconductor material of said opposite conductivity type on said regions of dielectric isolation and on said semiconductor regions of one conductivity type to form polycrystalline regions and single crystal regions on said regions of dielectric isolation and on said regions of one conductivity type, respectively, masking said single crystal regions of opposite conductivity type, introducing a dopant of opposite conductivity type into said polycrystalline regions to render said polycrystalline regions conductive, and, forming a zone of said one conductivity type in each said region of single crystal semiconductor and a zone of said opposite conductivity in said zone of said one conductivity type.
Claim 21
Dependent Claim
75 words
A method according to claim 18 wherein the step of forming regions of dielectric isolation and regions of semiconductor includes the steps of: masking said semiconductor substrate to expose at least three surface portions thereof, applying an etchant to said at least three surface portions to etch depressions in said substrate, filling said depressions with dielectric material and, introducing a dopant into said substrate to form regions of said one conductivity type between said depressions.
Claim 22
Dependent Claim
127 words
A method according to claim 18 wherein the step of forming a zone of said one conductivity type in each said region of single crystal semiconductor and a zone of said opposite conductivity type in said zone of said one conductivity type includes the steps of: oxidizing said regions of heavily doped, polycrystalline semiconductor and said regions of single crystal semiconductor to form an oxide layer having thick portions over said polycrystalline regions and thin oxide over said single crystal regions, etching said oxide layer to remove said thin oxide, and, introducing first and second dopants of said one conductivity type and said opposite conductivity type, respectively, into said regions of single crystal semiconductor in sequence to form said zones in said region of single crystal semiconductor.
Claim 23
Dependent Claim
25 words
A method according to claim 18 wherein said semiconductor substrate is a silicon substrate and said regions of dielectric isolation are regions of silicon oxide.
Claim 24
Dependent Claim
18 words
A method according to claim 18 wherein said regions of dielectric isolation are regions of recessed semiconductor oxide.
Claim 25
Dependent Claim
19 words
A method according to claim 18 further including the step of interconnecting said transistors to form a memory cell.
Claim 26
Dependent Claim
75 words
A method according to claim 18 wherein the step of forming regions of dielectric isolation and regions of semiconductor includes the steps of: forming a layer of dielectric isolation material on said substrate, removing portions of said layer of dielectric isolation material to form dielectric isolation regions and expose regions of said semiconductor substrate, and introducing a dopant into said substrate to form regions of said one conductivity type in said regions of said substrate.
Claim 27
Dependent Claim
120 words
A method according to claim 18 wherein the step of forming a zone of said one conductivity type in each said region of single crystal semiconductor and a zone of said opposite conductivity type in said zone of said one conductivity type includes the steps of: oxidizing said regions of heavily doped polycrystalline semiconductor and said regions of single crystal semiconductor to form an oxide layer having thick portions over said polycrystalline regions and thin oxide over said single crystal regions, and, introducing first and second dopants of said one conductivity type and said opposite conductivity type, respectively, into each said region of single crystal semiconductor in sequence to form said zones in each said region of single crystal semiconductor.
Claim 28
Dependent Claim
22 words
A method according to claim 19 wherein said dielectric material is one selected from the group consisting of silicon oxide, silicon nitride.
Claim 29
Dependent Claim
38 words
A method according to claim 19 wherein the step of filling said depressions with dielectric material includes the step of thermally oxidizing said substrate to regrow an oxide of the semiconductor from which said semiconductor substrate is made.
Claim 30
Dependent Claim
32 words
A method according to claim 19 wherein the step of introducing a dopant into said substrate includes the step of ion implanting a dopant of said one conductivity type into said substrate.
Claim 31
Dependent Claim
40 words
A method according to claim 18 wherein the step of depositing a layer of semiconductor material includes the step of depositing silicon by chemical vapor deposition in the presence of a dopant which renders said silicon of opposite conductivity type.
Claim 32
Dependent Claim
49 words
A method according to claim 18 wherein the step of introducing a dopant into said polycrystalline regions includes the steps of: masking said single crystal regions, and, diffusing a dopant of said opposite conductivity type into said polycrystalline regions in an amount sufficient to render said polycrystalline regions conductive.
Claim 33
Dependent Claim
28 words
A method according to claim 20 wherein the step of oxidizing includes the step of thermally regrowing an oxide of said polycrystalline semiconductor and said single crystal semiconductor.
Claim 34
Dependent Claim
22 words
A method according to claim 24 wherein said dielectric material is one selected from the group consisting of silicon oxide, silicon nitride.
Claim 35
Dependent Claim
32 words
A method according to claim 24 wherein the step of introducing a dopant into said substrate includes the step of ion implanting a dopant of said one conductivity type into said substrate.
Claim 36
Dependent Claim
28 words
A method according to claim 25 wherein the step of oxidizing includes the step of thermally regrowing an oxide of said polycrystalline semiconductor and said single crystal semiconductor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-22 | 1984-12-22 | 1985-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-22 | 1988-12-22 | 1989-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-22 | 1992-12-22 | 1993-06-23 | $7700.00 | Window Closed / Lapsed |