Patent US1169920A successfully refreshed from Google Patents.
Patent US4268327A successfully refreshed from Google Patents.
US4268327A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for growing semiconductor epitaxial layers
Assignee: Panasonic Holdings Corp
•
Filing: 1980-01-07
•
Granted: 1981-05-19
•
Expires: 2000-01-07
Abstract
Abstract A method for growing semiconductor epitaxial layers for manufacturing semiconductor devices such as light emitting diodes, characterized by using a single tub for containing a solution comprising solvent solute and additive, and after growing a first epitaxial layer growth by contacting the solution to a semiconductor substrate, evacuating the space in a container containing said semiconductor substrate and said solution tub, thereby removing at least a part of said additive.
Inventors
- 👤 Tamotsu Uragaki
- 👤 Morio Inoue
- 👤 Susumu Koike
- 👤 Hitoo Iwasa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:36
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B19/00; C30B19/02; C30B19/04; C30B19/06; C30B19/063; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/265; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
152 words
A method of growing semiconductor epitaxial layers on a substrate in an enclosed space, said method comprising the successive steps of: (a) forming a first epitaxial layer on said substrate by contacting a solution of a solvent, a solute and an impurity that determines the conductivity type with said semiconductor substrate for a predetermined period of time until a first epitaxial layer of the desired conductivity type is grown on said substrate; (b) evacuating the space in which said semiconductor substrate and said solution are contained and removing at least a portion of said impurity from the solution of step (a); and thereafter (c) forming a second epitaxial layer on the first epitaxial layer formed in step (a) by contacting the impurity-depleted solution from step (b) with the first-formed epitaxial layer on said substrate for a predetermined period of time until a second epitaxial layer is formed on said first epitaxial layer.
Claim 2
Independent Claim
152 words
A method of growing semiconductor epitaxial layers on a substrate in an enclosed space, said method comprising the successive steps of: (a) forming a first epitaxial layer on said substrate by contacting a solution of a solvent, a solute and an impurity that determines the conductivity type with said semiconductor substrate for a predetermined period of time until a first epitaxial layer of the desired conductivity type is grown on said substrate; (b) evacuating the space in which said semiconductor substrate and said solution are contained and removing at least a portion of said impurity from the solution of step (a); and thereafter (c) forming a second epitaxial layer on the first epitaxial layer formed in step (a) by contacting the impurity-depleted solution from step (b) with the first-formed epitaxial layer on said substrate for a predetermined period of time until a second epitaxial layer is formed on said first epitaxial layer.
Claim 3
Dependent Claim
52 words
The method according to claim 1 wherein a second impurity of the opposite type as contained in the solution of step (a) is added to the solution prior to step (c), the second epitaxial layer formed in step (c) is of a conductivity type opposite to that of said first epitaxial layer.
Claim 4
Dependent Claim
36 words
The method according to claim 1 wherein an amount of impurity is removed in step (b) such that the amount of said impurity contained in the first epitaxial layer is greater than the second epitaxial layer.
Claim 5
Dependent Claim
36 words
The method according to claim 1 wherein an additional quantity of at least one element contained in the solute of step (a) and evaporated in step (b) is added to the solution used in step (c).
References Cited (Backward Citations)
US3365630A
Cited
US3592704A
Cited
US3689330A
Cited
US3893875A
Cited
US3646406A
Cited
US3951699A
Cited
US3935039A
Cited
US3948693A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-18 | 1984-11-17 | 1985-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-18 | 1988-11-17 | 1989-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-18 | 1992-11-17 | 1993-05-19 | $7700.00 | Window Closed / Lapsed |