US3948693A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the production of yellow glowing gallium phosphide diodes
Assignee: Siemens AG
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Filing: 1974-07-23
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Granted: 1976-04-06
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Expires: 1994-07-23
Abstract
Abstract Process for the production of yellow glowing gallium phosphide diodes by a liquid phase epitaxial process in which the substrate is covered with a gallium melt saturated with gallium phosphide, elemental tellurium, oxygen and nitrogen are injected into the melt as dopants, a first layer is grown on the substrate from the melt, and then a zinc containing layer is deposited over the first layer, and the temperatures of the layers are controlled to cause diffusion of the zinc into the first layer to a predetermined depth.
Inventors
- 👤 Claus Weyrich
- 👤 Guenter Winstel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:15
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3446; Y; Y10; Y10S; Y10S117/00; Y10S117/906
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
101 words
A process for the production of yellow glowing gallium phosphide diodes by a liquid phase epitaxial process which comprises covering a substrate with a tellurium doped gallium melt saturated with gallium phosphide, diffusing gaseous oxygen and nitrogen into said melt as dopants, growing a first epitaxial layer on said substrate from said melt, growing a second epitaxial layer over said first layer, injecting vaporized zinc into said second layer during the growth of said second epitaxial layer and controlling the temperature of the layers to cause diffusion of the zinc from said second into said first layer to a predetermined depth.
Claim 2
Dependent Claim
101 words
A process for the production of yellow glowing gallium phosphide diodes by a liquid phase epitaxial process which comprises covering a substrate with a tellurium doped gallium melt saturated with gallium phosphide, diffusing gaseous oxygen and nitrogen into said melt as dopants, growing a first epitaxial layer on said substrate from said melt, growing a second epitaxial layer over said first layer, injecting vaporized zinc into said second layer during the growth of said second epitaxial layer and controlling the temperature of the layers to cause diffusion of the zinc from said second into said first layer to a predetermined depth.
Claim 3
Dependent Claim
31 words
The process of claim 1 in which a protective gas atmosphere is passed over said melt and said gaseous oxygen and a gaseous nitrogen source are added to said gas atmosphere.
Claim 4
Dependent Claim
17 words
The process of claim 3 in which said nitrogen is added in the form of ammonia gas.
Claim 5
Dependent Claim
29 words
The process of claim 1 in which the concentration of nitrogen dopant is in the range from 1 × 10 18 to 2 × 10 19 per cubic centimeter.
References Cited (Backward Citations)
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Cited
US3689330A
Cited
US3703671A
Cited
US3669767A
Cited
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Cited
US3783825A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-04-06 | 1979-10-06 | 1980-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-04-06 | 1983-10-06 | 1984-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-04-06 | 1987-10-06 | 1988-04-06 | $7700.00 | Window Closed / Lapsed |