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US4263605A
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Ion-implanted, improved ohmic contacts for GaAs semiconductor devices
Assignee: United States Department of the Navy
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Filing: 1979-01-04
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Granted: 1981-04-21
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Expires: 1999-01-04
Abstract
Abstract A method of attaining n + regions with fine planar geometry in the source and drain of GaAs devices utilizing ion implantation which improves Ohmic contact with a refractory film. A layer of TiW refractory film is deposited on GaAs. 29 Si ions are implanted in the GaAs through the refractory film so that the peak concentration is no more than approximately 100 A below the TiW-GaAs interface. The entire structure is then annealed. A gold overlay is then deposited on the TiW layer to which electrical contacts may be attached and by which the contact resistivity is measured. Typical specific contact resistivity values are in the low 10 -6 ohm/cm 2 range.
Inventors
- 👤 Aristos Christou
- 👤 John E. Davey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:31
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10P30/21; H10P30/212
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
60 words
In a GaAs semiconductor device having a GaAs base and a passivation layer of refractory material upon a surface thereof, the improvement comprising: an ion-doped layer within said GaAs base formed by implanting ions in said base so that the peak concentration of ions lies no more than 100 A below the interface of the GaAs and the refractory layer.
Claim 2
Dependent Claim
60 words
In a GaAs semiconductor device having a GaAs base and a passivation layer of refractory material upon a surface thereof, the improvement comprising: an ion-doped layer within said GaAs base formed by implanting ions in said base so that the peak concentration of ions lies no more than 100 A below the interface of the GaAs and the refractory layer.
Claim 3
Dependent Claim
23 words
The improvement set forth in claim 1, wherein: the ion concentration in said ion-doped layer is at least 1×10 14 ions/cm 2 .
Claim 4
Dependent Claim
46 words
The improvement set forth in claim 1, wherein: the ion concentration in said ion-doped layer is at least 1×10 14 ions/cm 2 ; and said GaAs base includes an n + layer of ions which is formed from the ion-doped layer by annealing the doped device.
Claim 5
Dependent Claim
22 words
The improvement of claim 1, wherein: the ion implantion material is selected from the group consisting of 29 Si, Se and Ge.
Claim 6
Dependent Claim
29 words
The improvement set forth in claim 3, wherein: the material of the refractory layer is selected from the group of materials consisting of TiW, Ta, W. Pt and Mo.
Claim 7
Dependent Claim
22 words
The improvement of claim 3, wherein: the ion implantion material is selected from the group consisting of 29 Si, Se and Ge.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-04-20 | 1984-10-20 | 1985-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-04-20 | 1988-10-20 | 1989-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-04-20 | 1992-10-20 | 1993-04-21 | $7700.00 | Window Closed / Lapsed |