Temperature gradient means in reactor tube of vapor deposition apparatus

Claim 1

In a furnace system for processing silicon-on sapphire devices having a cabin for storing and supplying gases and reactants used in the processing of SOS wafers, a furnace abutting said cabinet and having at least one refractory reaction tube extending therethrough, one end of said tube communicating with the cabinet for receiving the gases and reactants and the other end terminating in a scavenger chamber whereby to exhaust residual gases and reactants, the scavenger chamber being spaced from the furnace, and a loading-unloading chamber whereby SOS loaded boats may be handled for movement seriatim through the loading-unloading chamber, the scavenger chamber, the refractory reaction tube extending between the spaced apart scavenger chamber and furnace, and into the furnace, the improvement comprising: means providing a temperature gradient zone in said reaction tube extending between the scavenger chamber and the furnace; said means including a refractory liner tube about the reaction tube and extending from the supply conduit to a predetermined intermediate section between the furnace and scavenger chamber; and a tubular member of predetermined thermally insulative quality overlying said refractory liner and reaction tubes and extending from the furnace wall to a further predetermined intermediate reaction tube section; whereby, depending on process temperatures utilized, a predetermined temperature gradient is established in the reaction tube section outside of the furnace and whereby to inhibit the SOS wafers undergoing thermal shock.