US3183131A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor diffusion method
Assignee: Motorola Solutions Inc
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Filing: 1961-08-23
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Granted: 1965-05-11
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Expires: 1981-08-23
Abstract
No abstract record available.
Inventors
- 👤 Tomuaie R Huffman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:11
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/16; C30B31/165; C30B31/14; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
162 words
A METHOD OF DIFFUSING IMPURITIES INTO SEMICONDUCTOR WAFERS BY PRE-DEPOSITION AND REDISTRIBUTION AND CHARACTERIZED BY UNIFORM DIFFUSION CONDITIONS AND RESULTS ACROSS EACH WAFER AND FROM WAFER TO WAFER, SAID METHOD INCUDING THE STEPS OF COATING AN IMPURITY OXIDE MATERIAL ON A FLAT SUFACE OF A BCKING MEMBER, HEATING SAID BACKING MEMBER TO GLAZE SAID COATING THEREON, PLACING A PLURALITY OF SEMICONDUCTOR WAFERS IN A CLOSURE STRUCTURE WHICH INCLUDES SAID BACKING MEMBER SUCH THAT SAID WAFERS ALL LIE FLAT IN THE SAME PLANE SEPARATED THE SAME DISTANCE FROM AND PARALLEL TO THE IMPURITY MATERIAL ON SAID BACKING MEMBER, PLACING SAID CLOSURE STRUCTURE IN A HEATED REGION OF A DIFFUSION SYSTEM MAINTAINED AT A TEMPERATURE TO CAUSE VAPORIZATION OF IMPURITY MATERIAL FROM SAID BACKING MEMBER AND DIFFUSION OF IMPURITY MATERIAL INTO SAID WAFERS UNTIL A MAXIMUM CONCENTRATION OF THE IMPURITY FOR SAID TEMPERATURE EXISTS IN A SURFACE REGION OF EACH WAFER, AND SUBSEQUENTLY HEATING SAID WAFERS TO REDISTRIBUTE THE IMPURITIES INSAID WAFERS BY DIFFUSION.
Claim 2
Independent Claim
162 words
A METHOD OF DIFFUSING IMPURITIES INTO SEMICONDUCTOR WAFERS BY PRE-DEPOSITION AND REDISTRIBUTION AND CHARACTERIZED BY UNIFORM DIFFUSION CONDITIONS AND RESULTS ACROSS EACH WAFER AND FROM WAFER TO WAFER, SAID METHOD INCUDING THE STEPS OF COATING AN IMPURITY OXIDE MATERIAL ON A FLAT SUFACE OF A BCKING MEMBER, HEATING SAID BACKING MEMBER TO GLAZE SAID COATING THEREON, PLACING A PLURALITY OF SEMICONDUCTOR WAFERS IN A CLOSURE STRUCTURE WHICH INCLUDES SAID BACKING MEMBER SUCH THAT SAID WAFERS ALL LIE FLAT IN THE SAME PLANE SEPARATED THE SAME DISTANCE FROM AND PARALLEL TO THE IMPURITY MATERIAL ON SAID BACKING MEMBER, PLACING SAID CLOSURE STRUCTURE IN A HEATED REGION OF A DIFFUSION SYSTEM MAINTAINED AT A TEMPERATURE TO CAUSE VAPORIZATION OF IMPURITY MATERIAL FROM SAID BACKING MEMBER AND DIFFUSION OF IMPURITY MATERIAL INTO SAID WAFERS UNTIL A MAXIMUM CONCENTRATION OF THE IMPURITY FOR SAID TEMPERATURE EXISTS IN A SURFACE REGION OF EACH WAFER, AND SUBSEQUENTLY HEATING SAID WAFERS TO REDISTRIBUTE THE IMPURITIES INSAID WAFERS BY DIFFUSION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-05-10 | 1968-11-09 | 1969-05-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-05-10 | 1972-11-09 | 1973-05-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-05-10 | 1976-11-09 | 1977-05-11 | $7700.00 | Window Closed / Lapsed |