Method and apparatus of the continuous preparation of epitaxial layers of semiconducting III-V compounds from vapor phase

Claim 1

A METHOD FOR THE CONTINUOUS PREPARATION OF THE EPITAXIAL LAYERS OF A III-V TERNARY COMPOUND SEMICONDUCTOR REPRESENTED BY GENERAL FORMULA AB1-XCX ON A III-V BINARY COMPOUND SEMICONDUCTOR FROM A GAS MIXRUE, WHEREIN ABI-XCX STANDS FOR BOTH AIIIBV1-X AND BIII1-XCIIIXAV,AIII AND AV BEING III-B ELEMENT AND A V-B ELEMENT, RESPECTIVELY, AND BIII AND CIIIAND BV AND CV BEING TWO DIFFERENT III-B ELEMENTS AND V-B ELEMENTS, RESPECTIVELY, AND THE VALUE OF X BEING BETWEEN 0 AND 1, WHEREIN SAID III-V TERNARY COMPOUND SEMICONDUCTOR WITH A GRADED COMPOSITION IS GROWN WITHOUT CHANGING TIMEWISE THE COMPOSITION OF SAID GAS MIXTURE ENTERING INTO THE REACTION FURNACE, WHICH IS GIVEN A TEMPERATURE GRADIENT DECREASING WITH DISTANCE IN THE DIRECTION OF THE GAS FLOW, AND BY GRADUALLY CHANGING THE TEMPERATURE OF SAID III-V BINARY COMPOUND SEMICONDUCTOR, AND WHICH IS CHARACTERIZED BY CONTINUOUSLY CHANGING THE VALUE OF X TO RESULT IN THE GRADED COMPOSITION BY CONTINUOUSLY MOVING THE PLURALITY OF SAID III-V BINARY COMPOUND SEMICONDUCTOR SUBSTRATES, UPSTREAM OF SAID GAS FLOW IN THE SITUATION WHEN THE SUBSTRATE HAS A LOWER MELTING POINT, AND DOWNSTREAM OF SAID GAS FLOW IN HE SITUATION WHEN THE SUBSTRATE HAS A HIGHER MELTING POINT THAN SAID TERNARY COMPOUND SEMICONDUCTOR, RESPECTIVELY, THUS EFFECTIVELY ROWING SAID EPITAXIAL LAYERS ON SAID SUBSTRATES THEREBY GRADUALLY DECREASING THE CONSITUENT C AND NCREASING THE CONSITUENT B IN THE GAS MIXTURE IN THE REACTION FURNACE DOWNSTREAM OF SAID GAS FLOW IN THE SITUATION WHEN THE COMPOUND AB HAS A LOWER MELTING POINT THAN THE COMPOUND AC AND VICE VERSA IN THE SITUATION WHEN THE COMPOUND AB HAS A HIGHER MELTING POINT THAM THE COMPOUND AC.

Claim 2

A METHOD FOR THE CONTINUOUS PREPARATION OF THE EPITAXIAL LAYERS OF A III-V TERNARY COMPOUND SEMICONDUCTOR REPRESENTED BY GENERAL FORMULA AB1-XCX ON A III-V BINARY COMPOUND SEMICONDUCTOR FROM A GAS MIXRUE, WHEREIN ABI-XCX STANDS FOR BOTH AIIIBV1-X AND BIII1-XCIIIXAV,AIII AND AV BEING III-B ELEMENT AND A V-B ELEMENT, RESPECTIVELY, AND BIII AND CIIIAND BV AND CV BEING TWO DIFFERENT III-B ELEMENTS AND V-B ELEMENTS, RESPECTIVELY, AND THE VALUE OF X BEING BETWEEN 0 AND 1, WHEREIN SAID III-V TERNARY COMPOUND SEMICONDUCTOR WITH A GRADED COMPOSITION IS GROWN WITHOUT CHANGING TIMEWISE THE COMPOSITION OF SAID GAS MIXTURE ENTERING INTO THE REACTION FURNACE, WHICH IS GIVEN A TEMPERATURE GRADIENT DECREASING WITH DISTANCE IN THE DIRECTION OF THE GAS FLOW, AND BY GRADUALLY CHANGING THE TEMPERATURE OF SAID III-V BINARY COMPOUND SEMICONDUCTOR, AND WHICH IS CHARACTERIZED BY CONTINUOUSLY CHANGING THE VALUE OF X TO RESULT IN THE GRADED COMPOSITION BY CONTINUOUSLY MOVING THE PLURALITY OF SAID III-V BINARY COMPOUND SEMICONDUCTOR SUBSTRATES, UPSTREAM OF SAID GAS FLOW IN THE SITUATION WHEN THE SUBSTRATE HAS A LOWER MELTING POINT, AND DOWNSTREAM OF SAID GAS FLOW IN HE SITUATION WHEN THE SUBSTRATE HAS A HIGHER MELTING POINT THAN SAID TERNARY COMPOUND SEMICONDUCTOR, RESPECTIVELY, THUS EFFECTIVELY ROWING SAID EPITAXIAL LAYERS ON SAID SUBSTRATES THEREBY GRADUALLY DECREASING THE CONSITUENT C AND NCREASING THE CONSITUENT B IN THE GAS MIXTURE IN THE REACTION FURNACE DOWNSTREAM OF SAID GAS FLOW IN THE SITUATION WHEN THE COMPOUND AB HAS A LOWER MELTING POINT THAN THE COMPOUND AC AND VICE VERSA IN THE SITUATION WHEN THE COMPOUND AB HAS A HIGHER MELTING POINT THAM THE COMPOUND AC.