US4228450A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Buried high sheet resistance structure for high density integrated circuits with reach through contacts
Assignee: International Business Machines Corp
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Filing: 1977-10-25
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Granted: 1980-10-14
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Expires: 1997-10-25
Abstract
Abstract A high sheet resistance structure for high density integrated circuits and the method for manufacturing such structure is given. The structure includes a silicon region separated from other silicon regions by a dielectric barrier surrounding the region. A resistor of a first conductivity, for example, N type, encompasses substantially the surface of the silicon region. Electrical contacts are made to the resistor. A region highly doped of a second conductivity, for example, P-type, is located below a portion of the resistor region. This region of second conductivity is connected to the surface. Electrical contacts are made to this varied region for biasing purposes. A second region within the same isolated silicon region may be used as a resistor. This region is located below the buried region of second conductivity. Alternatively, the described resistor regions can be connected as transistors. This allows the formation of a standard masterslice which can be personalized at a late stage in the manufacturing to either resistors or transistors in all or a portion of the standard regions.
Inventors
- 👤 Narasipur G. Anantha
- 👤 Augustine W. Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:10
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10D; H10D1/00; H10D1/40; H10D1/43; H10D84/00; H10D84/201; H10D84/204; H10D84/209; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
135 words
A high resistance structure for high density integrated circuits comprising: a silicon region separated from other silicon regions by a dielectric barrier surrounding said region; a first resistor of a first conductivity encompassing substantially the surface of said silicon region; electrical contacts to said first resistor; a region highly doped of a second conductivity located below said region of a first conductivity with reach-through of said highly doped second conductivity to the surface of the said region of a second conductivity and electric contacts thereto for biasing purposes; and a second resistor encompassing a region of said first conductivity located below said region of a second conductivity; reach-through regions of a first conductivity from the surface of said silicon region to said second resistor; and electrical contacts to said reach-through regions of a first conductivity.
Claim 2
Dependent Claim
135 words
A high resistance structure for high density integrated circuits comprising: a silicon region separated from other silicon regions by a dielectric barrier surrounding said region; a first resistor of a first conductivity encompassing substantially the surface of said silicon region; electrical contacts to said first resistor; a region highly doped of a second conductivity located below said region of a first conductivity with reach-through of said highly doped second conductivity to the surface of the said region of a second conductivity and electric contacts thereto for biasing purposes; and a second resistor encompassing a region of said first conductivity located below said region of a second conductivity; reach-through regions of a first conductivity from the surface of said silicon region to said second resistor; and electrical contacts to said reach-through regions of a first conductivity.
Claim 3
Dependent Claim
23 words
The resistance structure of claim 1 wherein said dielectric barrier is composed of at least an outer layer of thermally grown silicon dioxide.
Claim 4
Dependent Claim
22 words
The resistance structure of claim 1 wherein said first conductivity is N, said second conductivity is P and said resistors are N-type.
Claim 5
Dependent Claim
22 words
The resistance structure of claim 1 wherein said first conductivity is P, said second conductivity is N and said resistors are P-type.
Claim 6
Dependent Claim
19 words
The resistance structure of claim 1 and further comprising in an adjacent said other silicon region an NPN transistor.
Claim 7
Dependent Claim
19 words
The resistance structure of claim 1 and further comprising in an adjacent said other silicon region a PNP transistor.
Claim 8
Dependent Claim
190 words
An integrated circuit structure comprising: silicon regions separated from like silicon regions by a dielectric barrier surrounding each of said regions; each of said silicon regions including a base region of a first conductivity, a second region over said base region of a second conductivity, a third region of said first conductivity buried within said second region so as to form electrically and physically separated upper and lower regions in said second region; and a reach-through region of said first conductivity connecting the surface of the silicon regions with said third region; means for electrically contacting said base, second upper, second lower and reach-through regions in said silicon regions to perform a desired circuit function; and said means for electrically connecting is so connected that a resistor is located in certain of said silicon regions, said resistor formed in said lower region of a second conductivity located below said third buried region of a first conductivity, said means for electrically contacting said lower region including reach-through regions of a second conductivity from the surface of said silicon region to said lower region of a second conductivity and electrical contacts thereto.
Claim 9
Dependent Claim
190 words
An integrated circuit structure comprising: silicon regions separated from like silicon regions by a dielectric barrier surrounding each of said regions; each of said silicon regions including a base region of a first conductivity, a second region over said base region of a second conductivity, a third region of said first conductivity buried within said second region so as to form electrically and physically separated upper and lower regions in said second region; and a reach-through region of said first conductivity connecting the surface of the silicon regions with said third region; means for electrically contacting said base, second upper, second lower and reach-through regions in said silicon regions to perform a desired circuit function; and said means for electrically connecting is so connected that a resistor is located in certain of said silicon regions, said resistor formed in said lower region of a second conductivity located below said third buried region of a first conductivity, said means for electrically contacting said lower region including reach-through regions of a second conductivity from the surface of said silicon region to said lower region of a second conductivity and electrical contacts thereto.
Claim 10
Dependent Claim
24 words
The integrated circuit structure of claim 7 wherein said dielectric barrier is composed of at least an outer layer of thermally grown silicon dioxide.
Claim 11
Dependent Claim
23 words
The integrated circuit structure of claim 7 wherein said first conductivity is N, said second conductivity is P, and said resistors are N-type.
Claim 12
Dependent Claim
23 words
The integrated circuit structure of claim 7 wherein said first conductivity is P, said second conductivity is N, and said resistors are P-type.
Claim 13
Dependent Claim
57 words
The integrated circuit structure of claim 7 wherein said means for electrically connecting is so connected that transistors are located within certain of said silicon regions other than wherein resistors are located, said first conductivity is N, said second conductivity is P, said transistors are PNP type and are located within said certain of said silicon regions.
Claim 14
Dependent Claim
56 words
The integrated circuit structure of claim 7 wherein said means for electrically connecting is so connected that transistors are located within certain of said silicon regions other than wherein resistors are located, said first conductivity is P, said second conductivity is N, said transistors are NPN type and are located within certain of said silicon regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-10-14 | 1984-04-14 | 1984-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-10-14 | 1988-04-14 | 1988-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-10-14 | 1992-04-14 | 1992-10-14 | $7700.00 | Window Closed / Lapsed |