Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
181 words
An integrated semiconductor circuit comprising an insulating substrate, a semiconductor wafer having one face mounted on said insulating substrate by an insulating adhesive, said semiconductor wafer comprising a plurality of physically separated wafer parts forming an array located in a first area of said wafer, said wafer parts respectively comprising heat dissipative elements at said one face, said heat dissipative elements being electrically and thermally isolated from one another by the physical separation of said wafer parts, said semiconductor wafer comprising a plurality of circuit elements formed at said one face and located in a spaced second area of said semiconductor wafer, the number of said plurality of circuit elements being at least as large as the number of said plurality of heat dissipative elements, PN junctions in said second area of said semiconductor wafer electrically isolating said plurality of circuit elements from one another through the semiconductor material, said second area of said semiconductor wafer being integral throughout, and conductive means located between said one face and said insulating substrate electrically interconnecting said head dissipative elements and said circuit elements.
Claim 2
Dependent Claim
181 words
An integrated semiconductor circuit comprising an insulating substrate, a semiconductor wafer having one face mounted on said insulating substrate by an insulating adhesive, said semiconductor wafer comprising a plurality of physically separated wafer parts forming an array located in a first area of said wafer, said wafer parts respectively comprising heat dissipative elements at said one face, said heat dissipative elements being electrically and thermally isolated from one another by the physical separation of said wafer parts, said semiconductor wafer comprising a plurality of circuit elements formed at said one face and located in a spaced second area of said semiconductor wafer, the number of said plurality of circuit elements being at least as large as the number of said plurality of heat dissipative elements, PN junctions in said second area of said semiconductor wafer electrically isolating said plurality of circuit elements from one another through the semiconductor material, said second area of said semiconductor wafer being integral throughout, and conductive means located between said one face and said insulating substrate electrically interconnecting said head dissipative elements and said circuit elements.
Claim 3
Dependent Claim
38 words
An integrated semiconductor circuit according to claim 1, wherein the opposite face of said semiconductor wafer is essentially planar, said semiconductor wafer is rectangular in shape and at least two parallel sides of said semiconductor wafer are integral.
Claim 4
Dependent Claim
26 words
A semiconductor integrated circuit according to claim 1, wherein said second area of said semiconductor wafer is larger than said first area of said semiconductor wafer.
Claim 5
Dependent Claim
33 words
An integrated semiconductor circuit according to claim 3, wherein the number of said plurality of circuit elements is at least twice as large as the number of said plurality of heat dissipative elements.
Claim 6
Dependent Claim
20 words
An integrated semiconductor circuit according to claim 2, wherein the other two parallel sides of said semiconductor wafer are integral.
Claim 7
Dependent Claim
35 words
An integrated semiconductor circuit according to claim 1, wherein said conductive means comprises a plurality of diffused conductive tunnels in said one face of said semiconductor wafer between said first area and said second area.
Claim 8
Dependent Claim
173 words
An integrated semiconductor circuit, comprising an insulating substrate, a smaller semiconductor wafer having one face mounted on said insulating substrate by an insulating adhesive, said semiconductor wafer comprising a plurality of physically separated wafer parts forming an array located in a first area of said wafer, said wafer parts respectively comprising diffused resistors at said one face, said diffused resistors being electrically and thermally isolated from one another by the physical separation of said wafer parts, said semiconductor wafer comprising a plurality of transistors formed at said one face and located in a larger spaced second area of said semiconductor wafer, the number of said transistors being at least as large as the number of said diffused resistors, PN junctions in said second area of said semiconductor wafer electrically isolating and transistors from one another through the semiconductor material, said second area of said semiconductor wafer being integral throughout, and conductive means located between said one face and said insulating substrate electrically interconnecting said resistors and said transistors for selectively energizing said resistors.
Claim 9
Dependent Claim
173 words
An integrated semiconductor circuit, comprising an insulating substrate, a smaller semiconductor wafer having one face mounted on said insulating substrate by an insulating adhesive, said semiconductor wafer comprising a plurality of physically separated wafer parts forming an array located in a first area of said wafer, said wafer parts respectively comprising diffused resistors at said one face, said diffused resistors being electrically and thermally isolated from one another by the physical separation of said wafer parts, said semiconductor wafer comprising a plurality of transistors formed at said one face and located in a larger spaced second area of said semiconductor wafer, the number of said transistors being at least as large as the number of said diffused resistors, PN junctions in said second area of said semiconductor wafer electrically isolating and transistors from one another through the semiconductor material, said second area of said semiconductor wafer being integral throughout, and conductive means located between said one face and said insulating substrate electrically interconnecting said resistors and said transistors for selectively energizing said resistors.