US4224089A — Process for producing a semiconductor device

Claim 1

Independent Claim 111 words

A process for producing a semiconductor device comprising the steps of: forming an impurity-introduced region within a semiconductor substrate; forming a masking film on a portion of the surface of said impurity-introduced region; forming an impurity-containing glass film on a surface of said semiconductor substrate including said masking film; opening a precursory window in a portion of said impurity-containing glass film over said masking film; smoothing the surface of said impurity-containing glass film by heating it; removing a portion of said masking film within said precursory window to provide a completed window for receiving an electrode contact; and forming an electrode connected to said impurity-introduced region surface through said completed window.

Claim 2

Dependent Claim 111 words

A process for producing a semiconductor device comprising the steps of: forming an impurity-introduced region within a semiconductor substrate; forming a masking film on a portion of the surface of said impurity-introduced region; forming an impurity-containing glass film on a surface of said semiconductor substrate including said masking film; opening a precursory window in a portion of said impurity-containing glass film over said masking film; smoothing the surface of said impurity-containing glass film by heating it; removing a portion of said masking film within said precursory window to provide a completed window for receiving an electrode contact; and forming an electrode connected to said impurity-introduced region surface through said completed window.

Claim 3

Dependent Claim 19 words

A process according to claim 1, wherein said semiconductor substrate comprises a silicon wafer of a first conductivity type.

Claim 4

Dependent Claim 13 words

A process according to claim 2, wherein said first conductivity type is n-type.

Claim 5

Dependent Claim 33 words

A process according to claim 1, wherein said substrate is of a first conductivity type and said impurity-introduced region is of a second conductivity type which is opposite to said first conductivity type.

Claim 6

Dependent Claim 13 words

A process according to claim 4, wherein said second conductivity type is p-type.

Claim 7

Dependent Claim 30 words

A process according to claim 1, wherein said substrate is of a first conductivity type and said impurity contained in said impurity-containing glass film is of the first conductivity type.

Claim 8

Dependent Claim 17 words

A process according to claim 6, wherein said impurity-containing glass film is a phosphosilicate glass (PSG) film.

Claim 9

Dependent Claim 37 words

A process according to claim 1, wherein said step of opening the precursory window in said impurity-containing glass film is carried out using an aqueous solution of ammonium fluoride and hydrogen fluoride (NH 4 F+HF+H 2 O).

Claim 10

Dependent Claim 30 words

A process according to claim 1, wherein said masking film is composed of a silicon dioxide film on said substrate and a silicon nitride film on said silicon dioxide film.

Claim 11

Dependent Claim 23 words

A process according to claim 9, wherein said silicon dioxide film is formed by thermal oxidation of a portion of said silicon wafer.

Claim 12

Dependent Claim 25 words

A process according to claim 9, wherein said silicon dioxide film is chemically etched by using an aqueous solution of ammonium fluoride and hydrogen fluoride.

Claim 13

Dependent Claim 19 words

A process according to claim 9, wherein said silicon nitride is formed by a chemical vapor diposition (CVD) method.

Claim 14

Dependent Claim 23 words

A process according to claim 9, wherein said silicon nitride is etched by a plasma etching method using carbon tetrafluoride (CF 4 ).

Claim 15

Dependent Claim 20 words

A process according to claim 1, wherein said semiconductor device is a metal insulator semiconductor field effect transistor (MIS FET).

Claim 16

Dependent Claim 20 words

A process according to claim 1, wherein said semiconductor device is a complementary metal oxide semiconductor (CMOS) field effect transistor.

Claim 17

Dependent Claim 142 words

In a process for manufacturing a semiconductor device comprising providing an electrode connection without discontinuities through a window to a portion of the surface of a semiconductor component of said device and the heating of a glass component of said device containing an impurity that is capable of diffusing out of said glass component and into said portion of said surface during said heating, the improvement comprising: providing a masking layer at said portion of said durface before said heating of said glass; removing a portion of said masking layer corresponding to said window after said heating of said glass to complete said window to said portion of said surface of said semiconductor component; and providing said electrode connection in said window; whereby said out-diffusing impurity is kept from entering said portion of said surface of said semiconductor component during said heating.

Claim 18

Dependent Claim 142 words

In a process for manufacturing a semiconductor device comprising providing an electrode connection without discontinuities through a window to a portion of the surface of a semiconductor component of said device and the heating of a glass component of said device containing an impurity that is capable of diffusing out of said glass component and into said portion of said surface during said heating, the improvement comprising: providing a masking layer at said portion of said durface before said heating of said glass; removing a portion of said masking layer corresponding to said window after said heating of said glass to complete said window to said portion of said surface of said semiconductor component; and providing said electrode connection in said window; whereby said out-diffusing impurity is kept from entering said portion of said surface of said semiconductor component during said heating.

Claim 19

Dependent Claim 54 words

The improved process of claim 16, comprising forming said masking layer to prevent contact of said glass component with said portion of said surface of said semiconductor portion of said device before said heating, and forming a portion of said window through said glass component down to said masking layer prior to said heating.

Claim 20

Dependent Claim 27 words

The improved process of claim 17 comprising forming said glass component to be in contact with and to cover at least a portion of said masking layer.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1983-09-23	1984-03-24	1984-09-23	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1987-09-23	1988-03-24	1988-09-23	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1991-09-23	1992-03-24	1992-09-23	$7700.00	Window Closed / Lapsed

Process for producing a semiconductor device

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