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US4206003A
Expired / Lapsed
US
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Method of forming a mercury cadmium telluride photodiode
Assignee: Honeywell Inc
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Filing: 1979-01-23
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Granted: 1980-06-03
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Expires: 1999-01-23
Abstract
Abstract A mercury cadmium telluride photodiode includes an n-type mercury cadmium telluride body with an accumulation layer proximate a first surface of the body. A p-type region is formed in the body at the first surface so that the n-type accumulation layer surrounds the p-type region at the first surface.
Inventors
- 👤 Toivo Koehler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:56
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2212; H10F71/00; H10F71/125; H10F71/1253; H10P30/21; H10P30/212; H10P30/22; H10P30/28
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
41 words
A method of making a mercury cadmium telluride photodiode comprising: forming an accumulation layer proximate a first surface of an n-type mercury cadmium telluride body; and forming a p-type region in the n-type mercury cadmium telluride body proximate the first surface.
Claim 2
Independent Claim
41 words
A method of making a mercury cadmium telluride photodiode comprising: forming an accumulation layer proximate a first surface of an n-type mercury cadmium telluride body; and forming a p-type region in the n-type mercury cadmium telluride body proximate the first surface.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein forming an accumulation layer comprises forming an anodic oxide passivation layer on the first surface.
Claim 4
Dependent Claim
17 words
The method of claim 1 wherein forming a p-type region comprises implanting acceptor impurities into the body.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein forming a p-type region comprises introducing acceptor impurities into the body at a portion of the first surface.
Claim 6
Dependent Claim
18 words
The method of claim 3 wherein forming the p-type region further comprises heat treating the body after implanting.
Claim 7
Dependent Claim
25 words
The method of claim 3 wherein implanting of acceptor impurities into the body is through a passivation layer on the first surface of the body.
Claim 8
Dependent Claim
31 words
The method of claim 5 wherein forming the p-type region further comprises: encapsulating the first surface prior to heat treating to maintain mercury vapor pressure in the body during heat treating.
Claim 9
Dependent Claim
21 words
The method of claim 4 wherein introducing acceptor impurities into the body comprises ion implanting the acceptor impurities into the body.
Claim 10
Dependent Claim
29 words
The method of claim 8 and further comprising forming a passivation layer on the first surface prior to ion implanting and wherein ion implanting is through the passivation layer.
Claim 11
Dependent Claim
18 words
The method of claim 9 and further comprising forming contact through the passivation layer to the p-type region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-06-03 | 1983-12-03 | 1984-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-06-03 | 1987-12-03 | 1988-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-06-03 | 1991-12-03 | 1992-06-03 | $7700.00 | Window Closed / Lapsed |