US4105472A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Preparation of silicon doped mercury cadmium telluride
Assignee: Honeywell Inc
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Filing: 1978-02-06
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Granted: 1978-08-08
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Expires: 1998-02-06
Abstract
Abstract Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium, in the mercury cadmium telluride crystal. Doping of a region of mercury cadmium telluride with silicon can produce a PN junction when the adjacent region is P-type, and an N-N+ type junction when the adjacent region is N-type.
Inventors
- 👤 Robert A. Lancaster
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 02:16
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H10F71/1253; C; C30; C30B; C30B13/00; C30B29/00; C30B29/10; C30B29/46; C30B29/48; H10D; H10D62/00; H10D62/80; H10D62/86; H10D62/864; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F77/1233; H10P; H10P32/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/915
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
38 words
In a method of bulk growing crystals of mercury cadmium telluride to form a semiconductor body, the improvement comprising: the step of adding a quantity of silicon to said mercury cadmium telluride prior to formation of said body.
Claim 2
Dependent Claim
38 words
In a method of bulk growing crystals of mercury cadmium telluride to form a semiconductor body, the improvement comprising: the step of adding a quantity of silicon to said mercury cadmium telluride prior to formation of said body.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said quantity of silicon is sufficient to measurably increase the donor concentration of said mercury cadmium telluride.
Claim 4
Dependent Claim
25 words
The method of claim 1 wherein said concentration of silicon ranges from 10 10 atoms per cubic centimeter to 10 20 atoms per cubic centimeter.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein said silicon is present at the lattice sites in said mercury cadmium telluride.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein said silicon is substituted for metal in said mercury cadmium telluride.
References Cited (Backward Citations)
US3191045A
Cited
US3740690A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-08-07 | 1982-02-06 | 1982-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-08-07 | 1986-02-06 | 1986-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-08-07 | 1990-02-06 | 1990-08-08 | $7700.00 | Window Closed / Lapsed |