Integrated injection logic with floating reinjectors

Claim 1

In an integrated injection logic (I 2 L) device having at least two gate structures formed in a body of semiconductor material, each of said gate structures including a first region of one type conductivity disposed adjacent to a surface of said body and having an injector region and a base region of the opposite type conductivity disposed therein adjacent to said surface, said base region being apart from said injector region and having at least one collector region of the one type conductivity disposed therein adjacent to said surface, wherein the injector regions of said gate structures are connected in parallel to a single input electrode, the improvement in said device comprising: each of said gate structures having a second region of the opposite type conductivity disposed in said first region adjacent to said surface between said injector and said base regions, said second region being an electrically-floating region free of any contact electrode and having a width greater than the width of the injector region.