Patent US4197332A successfully refreshed from Google Patents.
US4197332A
Expired / Lapsed
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Sub 100A range line width pattern fabrication
Assignee: International Business Machines Corp
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Filing: 1979-02-12
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Granted: 1980-04-08
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Expires: 1999-02-12
Abstract
Abstract Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support. The resist is for example a contamination film from a vacuum pump oil used in evacuating the apparatus used to perform the process, e.g. silicone oil.
Inventors
- 👤 Alec N. Broers
- 👤 Jerome J. Cuomo
- 👤 Robert B. Laibowitz
- 👤 Walter W. Molzen, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:34
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2045; G; G03; G03F; G03F7/00; G03F7/004; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/68; H10P14/683; Y; Y10; Y10S; Y10S430/00; Y10S430/143
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
37 words
In the formation of patterns by the process of electron beam irradiation of resist material, the improvement comprising providing surface migratable resist material in a thickness less than the thickness required for the pattern to be formed.
Claim 2
Dependent Claim
37 words
In the formation of patterns by the process of electron beam irradiation of resist material, the improvement comprising providing surface migratable resist material in a thickness less than the thickness required for the pattern to be formed.
Claim 3
Dependent Claim
49 words
In the formation of patterns by the process of electron beam irradiation of resist material the improvement comprising the use of the combination of a backscattering control substrate with a surface migratable resist material provided in a thickness less than the thickness required for the pattern to be formed.
Claim 4
Dependent Claim
49 words
In the formation of patterns by the process of electron beam irradiation of resist material the improvement comprising the use of the combination of a backscattering control substrate with a surface migratable resist material provided in a thickness less than the thickness required for the pattern to be formed.
Claim 5
Dependent Claim
23 words
The improvement in the electron beam formation of resist patterns of claim 2 wherein said resist material is provided from a vapor source.
Claim 6
Dependent Claim
65 words
The process of forming patterns comprising in combination the steps of providing a thin film type member supported by a non-electron backscattering substrate with an electron beam convertible resist having a thickness less than the thickness required for the pattern to be formed; and exposing the resist to a focused electron beam for a time sufficient to irradiate the resist to the required pattern dimensions.
Claim 7
Dependent Claim
65 words
The process of forming patterns comprising in combination the steps of providing a thin film type member supported by a non-electron backscattering substrate with an electron beam convertible resist having a thickness less than the thickness required for the pattern to be formed; and exposing the resist to a focused electron beam for a time sufficient to irradiate the resist to the required pattern dimensions.
Claim 8
Dependent Claim
23 words
The process of claim 3 wherein said exposing step includes the step of monitoring scattered electrons to control time of said exposing step.
Claim 9
Dependent Claim
20 words
The process of claim 5 including the step of separating a pattern from said thin film type member by etching.
Claim 10
Dependent Claim
70 words
The process of forming patterns comprising in combination: placing a resist capable of surface migration and electron beam conversion and fixing on a thin film type member in a thickness less than the thickness dimension required for the pattern to be formed, supporting the thin film type member with a non-electron backscattering substrate; and exposing the resist to a focused electron beam until the required pattern thickness dimension is reached.
Claim 11
Dependent Claim
70 words
The process of forming patterns comprising in combination: placing a resist capable of surface migration and electron beam conversion and fixing on a thin film type member in a thickness less than the thickness dimension required for the pattern to be formed, supporting the thin film type member with a non-electron backscattering substrate; and exposing the resist to a focused electron beam until the required pattern thickness dimension is reached.
Claim 12
Dependent Claim
26 words
The process of claim 7 wherein said exposing step includes the step of exposure duration control by monitoring electron scattering by the converted and fixed resist.
Claim 13
Dependent Claim
20 words
The process of claim 8 including the step of separating the pattern from said thin film type member by etching.
Claim 14
Dependent Claim
35 words
The process of claim 9 wherein said non-electron backscattering substrate is a member of the group of Si, Si 3 N 4 , SiO 2 , Al 2 O 3 , polyimide, collodion and carbon.
Claim 15
Dependent Claim
12 words
The process of claim 10 wherein said resist is an organic material.
Claim 16
Dependent Claim
11 words
The process of claim 11 wherein said resist is silicone oil.
Claim 17
Dependent Claim
10 words
The process of claim 11 wherein said resist is tetraphenyl-tetramethyl-trisiloxane.
Claim 18
Dependent Claim
14 words
The process of claim 10 wherein said pattern separation is done by ion etching.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-08 | 1983-10-08 | 1984-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-08 | 1987-10-08 | 1988-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-08 | 1991-10-08 | 1992-04-08 | $7700.00 | Window Closed / Lapsed |