US4170667A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing pure polycrystalline silicon
Assignee: Motorola Solutions Inc
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Filing: 1978-04-24
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Granted: 1979-10-09
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Expires: 1998-04-24
Abstract
Abstract A process for the production of high purity polycrystalline silicon from a mixture of silicon tetrachloride and trichlorosilane. Such a mixture can be used for the rapid deposition of polycrystalline silicon while, at the same time, producing an excess of trichlorosilane in exhaust gases from the reaction. The process permits the modification of the reactor design for the economical and energy conscious production of polycrystalline silicon.
Inventors
- 👤 Michael A. Rodgers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 05:16
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/021; C01B33/027; C01B33/035; C23; C23C; C23C16/00; C23C16/22; C23C16/24
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
117 words
A process for producing pure semiconductor grade polycrystalline silicon in a reaction chamber having insulated walls comprising the steps of: introducing about 7 to 8.2 mole percent trichlorosilane in hydrogen into said reaction chamber through inlets located near the center of said chamber; introducing about 12 to 13 mole percent silicon tetrachloride in hydrogen into said reaction chamber through inlets located in close proximity to said insulated walls of said reaction chamber; mixing said silicon tetrachloride and trichlorosilane in hydrogen within said reaction chamber; reacting said mixture of silicon tetrachloride and trichlorosilane in hydrogen at a temperature between 900° C. and 1200° C. to form silicon; and depositing said silicon on a filament within said reaction chamber.
Claim 2
Dependent Claim
117 words
A process for producing pure semiconductor grade polycrystalline silicon in a reaction chamber having insulated walls comprising the steps of: introducing about 7 to 8.2 mole percent trichlorosilane in hydrogen into said reaction chamber through inlets located near the center of said chamber; introducing about 12 to 13 mole percent silicon tetrachloride in hydrogen into said reaction chamber through inlets located in close proximity to said insulated walls of said reaction chamber; mixing said silicon tetrachloride and trichlorosilane in hydrogen within said reaction chamber; reacting said mixture of silicon tetrachloride and trichlorosilane in hydrogen at a temperature between 900° C. and 1200° C. to form silicon; and depositing said silicon on a filament within said reaction chamber.
Claim 3
Dependent Claim
19 words
The process of claim 1 wherein said reaction chamber is heated by heater elements located outside said reaction chamber.
Claim 4
Dependent Claim
15 words
The process of claim 1 wherein the temperature is approximately 1090° C. to 1100° C.
References Cited (Backward Citations)
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Cited
US3865647A
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US3734770A
Cited
US3933985A
Cited
US3900660A
Cited
US3963838A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-10-08 | 1983-04-09 | 1983-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-10-08 | 1987-04-09 | 1987-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-10-08 | 1991-04-09 | 1991-10-09 | $7700.00 | Window Closed / Lapsed |