Patent US4151543A successfully refreshed from Google Patents.
US4151543A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Lead electrode structure for a semiconductor chip carried on a flexible carrier
Assignee: Sharp Corp
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Filing: 1977-04-12
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Granted: 1979-04-24
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Expires: 1997-04-12
Abstract
Abstract A semiconductor device comprises an insulating substrate such as a film carrier having wiring patterns formed thereon, lead electrodes connected to the wiring patterns, and a semiconductor chip bonded to the lead electrodes. The surface of the lead electrodes, to which the semiconductor chip is bonded, is smooth as compared with that of the wiring patterns, thereby ensuring accurate operation of the semiconductor device.
Inventors
- 👤 Masao Hayakawa
- 👤 Takamichi Maeda
- 👤 Masao Kumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 12:16
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/695; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/07251; H10W72/20; H10W72/251; H10W72/252; H10W74/00; H10W74/10; H10W74/111; H10W74/127
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
73 words
A semiconductor device comprising: an insulating substrate; an aperture formed in the insulating substrate; wiring patterns formed on the insulating substrate; finger lead electrodes extending toward said aperture and electrically connected to said wiring patterns, the surfaces of the finger lead electrodes being smooth as compared to the surfaces of said wiring patterns; and a semiconductor chip secured within said aperture and electrically connected to said smooth surfaces of said finger lead electrodes.
Claim 2
Dependent Claim
73 words
A semiconductor device comprising: an insulating substrate; an aperture formed in the insulating substrate; wiring patterns formed on the insulating substrate; finger lead electrodes extending toward said aperture and electrically connected to said wiring patterns, the surfaces of the finger lead electrodes being smooth as compared to the surfaces of said wiring patterns; and a semiconductor chip secured within said aperture and electrically connected to said smooth surfaces of said finger lead electrodes.
Claim 3
Dependent Claim
88 words
In a semiconductor device including an insulating substrate, a metal film having a roughened surface attached to said insulating substrate, said metal film being shaped to include portions defining wiring patterns formed on the insulating substrate with roughened surfaces of said wiring patterns contiguous thereto and portions defining lead electrodes, and a semiconductor chip bonded to selected surfaces of said lead electrodes, the improvement comprising: said selected surfaces of said lead electrodes being smooth as compared to the roughened surfaces of said wiring patterns contiguous with said substrate.
Claim 4
Dependent Claim
88 words
In a semiconductor device including an insulating substrate, a metal film having a roughened surface attached to said insulating substrate, said metal film being shaped to include portions defining wiring patterns formed on the insulating substrate with roughened surfaces of said wiring patterns contiguous thereto and portions defining lead electrodes, and a semiconductor chip bonded to selected surfaces of said lead electrodes, the improvement comprising: said selected surfaces of said lead electrodes being smooth as compared to the roughened surfaces of said wiring patterns contiguous with said substrate.
Claim 5
Dependent Claim
21 words
The semiconductor device of claim 1, wherein the wiring patterns and the finger lead electrodes are made of a copper film.
Claim 6
Dependent Claim
39 words
The semiconductor device of claim 3, wherein one surface of the wiring patterns confronting the insulating substrate has a roughness of three to fifteen microns (3-15μm) amplitude, and the wiring patterns are attached to the insulating substrate via adhesive.
Claim 7
Dependent Claim
19 words
The semiconductor device of claim 3, wherein said copper film is formed through the use of a plating method.
Claim 8
Dependent Claim
28 words
The semiconductor device of claim 1, wherein the semiconductor chip comprises bumps which are connected to the smoothed surface of the finger lead electrodes via an eutectic alloy.
Claim 9
Dependent Claim
44 words
The semiconductor device of claim 6, wherein the smoothed surface of the finger lead electrodes are coated with tin and the bumps are essentially made of gold, and wherein the bumps are connected to the finger lead electrodes via an eutectic alloy of Au-Sn.
Claim 10
Dependent Claim
16 words
The semiconductor device of claim 1, wherein the insulating substrate is made of a polyimide film.
References Cited (Backward Citations)
US3480836A
Cited
US3780352A
Cited
US3724068A
Cited
US3832769A
Cited
US3793714A
Cited
US4045863A
Cited
US3781596A
Cited
US4024570A
Cited
US3968563A
Cited
US4027236A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-23 | 1982-10-23 | 1983-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-23 | 1986-10-23 | 1987-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-23 | 1990-10-23 | 1991-04-24 | $7700.00 | Window Closed / Lapsed |