US4045863A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing metallic carrier system for a multi-electrode semiconductor strip
Assignee: Siemens AG
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Filing: 1976-08-30
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Granted: 1977-09-06
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Expires: 1996-08-30
Abstract
Abstract Method of producing a metallic carrier system mounting, making conductive contact with a semi-conductor member through relatively thin tongue-like inner feed lines made from a different metal than the metal of the carrier. The inner feed lines are made from a metal that can readily be connected with the electrodes of the semi-conductor, such as nickel. The thin feed lines extend from the outer support and connection legs and are made from a different metal that can readily be soldered, such as brass and have conductive contact with said legs. The inner feed lines and carrier are made by an etching process. The inner feed lines supporting the semi-conductor are resilient, and by their resiliency balance thermal expansion between the semi-conductor substrate and the coarse structure of the connection legs of the system carrier.
Inventors
- 👤 Gerhard Mitterhummer
- 👤 Hanns-Heinz Peltz
- 👤 Heinrich Mayer
- 👤 Fritz Conzelmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:03
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10W70/00; H10W70/01; H10W70/04; H10W70/042; H10W70/40; H10W70/421; H10W70/424; H10W70/456; H10W70/457; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; Y; Y10; Y10S; Y10S148/00; Y10S148/106; Y10S148/15; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
197 words
A method for producing a metallic carrier system for a multi-electrode semi-conductor chip comprising the steps of: a. providing a base carrier sheet of a first metal that can readily be soldered; b. etching recesses in the carrier sheet in portions of the carrier sheet to be covered by inner feed lines; c. applying covering masks to opposite sides of the sheet by photolithographic process with open portions in the mask on one side of the carrier sheet conforming to the inner feed lines; d. producing inner feed lines with recessed expansible portions by the galvanic deposition of at least a second metal in the open portions of the mask, and into said recesses, said second metal being of a type capable of being readily connected to a semi-conductor body; e. covering the feed lines with protective layers; and f. then etching the outer carrier legs from the opposite side of the sheet in accordance with the pattern of the covering mask applied thereto by selective etching; the recessed expansible portions of the feed lines compensating for the difference in expansion between the connection legs of the carrier sheet, the inner feed lines and the semi-conductor chip.
Claim 2
Independent Claim
197 words
A method for producing a metallic carrier system for a multi-electrode semi-conductor chip comprising the steps of: a. providing a base carrier sheet of a first metal that can readily be soldered; b. etching recesses in the carrier sheet in portions of the carrier sheet to be covered by inner feed lines; c. applying covering masks to opposite sides of the sheet by photolithographic process with open portions in the mask on one side of the carrier sheet conforming to the inner feed lines; d. producing inner feed lines with recessed expansible portions by the galvanic deposition of at least a second metal in the open portions of the mask, and into said recesses, said second metal being of a type capable of being readily connected to a semi-conductor body; e. covering the feed lines with protective layers; and f. then etching the outer carrier legs from the opposite side of the sheet in accordance with the pattern of the covering mask applied thereto by selective etching; the recessed expansible portions of the feed lines compensating for the difference in expansion between the connection legs of the carrier sheet, the inner feed lines and the semi-conductor chip.
Claim 3
Dependent Claim
18 words
The method of claim 1 in which the first metal is brass and the second metal is nickel.
Claim 4
Dependent Claim
34 words
The method of claim 1 including the step of attaching the inner feed lines to the electrodes of the semiconductor chip, and then encapsulating the inner feed lines and electrodes in a plastic material.
Claim 5
Independent Claim
149 words
A method for producing a metallic carrier system for a multi-electrode semi-conductor chip comprising the steps of: a. providing a base carrier sheet of a first metal that can readily be soldered; b. applying covering masks to opposite sides of the sheet by photolithographic process with open portions in the mask on one side of the carrier sheet conforming to the inner feed lines; c. producing the inner feed lines by the galvanic deposition of at least a second metal in the open portions of the mask and of a type capable of being readily connected to a semi-conductor body; d. covering the feed lines with etching protective layers to protect the lines from etching; and e. then etching the carrier sheet to form outer circuit connection legs from the opposite side of the sheet in accordance with the pattern of the covering mask applied thereto by selective etching.
Claim 6
Independent Claim
149 words
A method for producing a metallic carrier system for a multi-electrode semi-conductor chip comprising the steps of: a. providing a base carrier sheet of a first metal that can readily be soldered; b. applying covering masks to opposite sides of the sheet by photolithographic process with open portions in the mask on one side of the carrier sheet conforming to the inner feed lines; c. producing the inner feed lines by the galvanic deposition of at least a second metal in the open portions of the mask and of a type capable of being readily connected to a semi-conductor body; d. covering the feed lines with etching protective layers to protect the lines from etching; and e. then etching the carrier sheet to form outer circuit connection legs from the opposite side of the sheet in accordance with the pattern of the covering mask applied thereto by selective etching.
Claim 7
Dependent Claim
18 words
The method of claim 4 in which the first metal is brass and the second metal is nickel.
Claim 8
Dependent Claim
34 words
The method of claim 4 including the step of attaching the inner feed lines to the electrodes of the semiconductor chip, and then encapsulating the inner feed lines and electrodes in a plastic material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-05 | 1981-03-07 | 1981-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-05 | 1985-03-07 | 1985-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-05 | 1989-03-07 | 1989-09-06 | $7700.00 | Window Closed / Lapsed |