RF sputtering apparatus having floating anode shield

Claim 2

In apparatus for the radio frequency sputtering of target material onto substrates including: a low-pressure ionization chamber connected to a reference potential, a source of radio frequency power for producing a plasma across a target electrode and a substrate electrode in said chamber, impedance means electrically connected directly between said substrate electrode and said reference potential, further including a substrate electrode shield partially enclosing said substrate electrode for protecting said substrate electrode from unwanted sputtering, the improvement wherein: said shield is insulated from said reference potential.

Claim 3

Apparatus as in claim 1 wherein said impedance means includes a variable capacitance.

Claim 4

Apparatus as in claim 1 wherein said shield is insulated from said reference potential by insulation means disposed between said shield and said chamber.

Claim 5

Apparatus as in claim 3 wherein said insulation means comprises teflon.

Claim 6

Apparatus as in claim 1 wherein said apparatus is a tuned anode system operable at 13.5 MHz.

Claim 7

Apparatus as in claim 5 wherein said target electrode comprises dielectric material to be sputtered.

Claim 8

Apparatus as in claim 1 wherein: said substrate electrode is disc-shaped; and said shield means is spaced from said substrate electrode and surrounds substantially all but the surface of said substrate electrode which faces said target electrode; said shield means comprising: a plate disposed beneath said substrate electrode; a spacer removably mounted atop said plate surrounding a portion of the side surface of said substrate electrode; a ring removably mounted atop said spacer surrounding another portion of the side surface of said substrate electrode; whereby measurement of the spacing between said shield and said substrate electrode may be made by removal of said spacer and said ring.

Claim 9

Apparatus as in claim 7 further comprising: a disc-shaped substrate holder disposed atop, and overhanging the upper surface of, said substrate electrode; said substrate holder being spaced from said ring.

Claim 10

In apparatus for RF sputtering including a low-pressure ionization chamber connected to a reference potential, a target electrode, a target of dielectric material supported on the target electrode, a substrate electrode, a source of RF power to produce a plasma in the region between the target electrode and the substrate electrode, means for electrically insulating said target electrode and said substrate electrode from said chamber, impedance means electrically connected directly between said substrate electrode and said reference potential, said impedance means to provide a control of the relative RF voltage between the substrate electrode and said reference potential, and substrate electrode shield means for partial shielding of said substrate electrode, the improvement wherein said shield means is insulated from said reference potential.

Claim 11

In apparatus for RF sputtering including a low-pressure ionization chamber connected to a reference potential, a target electrode, a target of dielectric material supported on the target electrode, a substrate electrode, a source of RF power to produce a plasma in the region between the target electrode and the substrate electrode, means for electrically insulating said target electrode and said substrate electrode from said chamber, impedance means electrically connected directly between said substrate electrode and said reference potential, said impedance means to provide a control of the relative RF voltage between the substrate electrode and said reference potential, and substrate electrode shield means for partial shielding of said substrate electrode, the improvement wherein said shield means is insulated from said reference potential.

Claim 12

Apparatus as in claim 9 wherein said impedance means is variable and said substrate electrode is adapted to support workpieces to be coated with said dielectric material, whereby said impedance means may be adjusted to control the rate of resputtering of said dielectric material from said workpiece.

Claim 13

Apparatus as in claim 10 wherein: said apparatus is a tuned anode system operable at 13.56 MHz, said dielectric material is glass; and said rate of resputtering is variable so as to provide a substantially zero deposition rate on said workpieces before the point of RF current instability is reached in said chamber.

Claim 14

Apparatus as in claim 9 wherein said shield is insulated from said reference potential by insulation means disposed between said shield and said chamber.

Claim 15

Apparatus as in claim 12 wherein said insulation means comprises teflon.

Claim 16

Apparatus as in claim 9 wherein: said substrate electrode is disc-shaped; and said shield means is spaced from said substrate electrode and surrounds substantially all but the surface of said substrate electrode which faces said target electrode; said shield means comprising: a plate disposed beneath said substrate electrode; a spacer removably mounted atop said plate surrounding a portion of the side surface of said substrate electrode; a ring removably mounted atop said spacer surrounding another portion of the side surface of said electrode; whereby measurement of the spacing between said shield and said substrate electrode may be made by removal of said spacer and said ring.

Claim 17

Apparatus as in claim 14 further commprising: a disc-shaped substrate holder disposed atop, and overhanging the upper surface of, said substrate electrode, said substrate holder being spaced from said ring.

Claim 18

Apparatus as in claim 14 further comprising: a protective shield means attached to the side surface of said substrate electrode shield for protecting said substrate electrode shield from sputtered particles.