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US4124934A
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Manufacture of semiconductor devices in which a doping impurity is diffused from a polycrystalline semiconductor layer into an underlying monocrystalline semiconductor material, and semiconductor devices thus manufactured
Assignee: US Philips Corp
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Filing: 1977-02-01
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Granted: 1978-11-14
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Expires: 1997-02-01
Abstract
Abstract A method of manufacturing a semiconductor device in which a layer of polycrystalline material having a high impurity concentration is used prior to the diffusion of a thin region having strong surface concentration and prior to providing a contact to the said region. The polycrystalline layer is comparatively thick prior to the diffusion and is reduced in thickness before the metal contact is provided.
Inventors
- 👤 Michel DE Brebisson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:07
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P32/14; H10P32/1408; H10P32/1414; H10P50/00; H10P50/20; H10P50/26; H10P50/262; H10P50/263; H10W; H10W20/00; H10W20/01; Y; Y10; Y10S; Y10S148/00; Y10S148/02
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
175 words
A method of manufacturing a semiconductor device, comprising the steps of: (a) providing a semiconductor body comprising a major surface and a monocrystalline semiconductor material located at said major surface, (b) providing a protective insulating layer on said monocrystalline material, said insulating layer having therein at least one window which gives access to said monocrystalline semiconductor material, (c) depositing at said major surface a layer of polycrystalline semiconductor material which comprises a doping impurity, (d) diffusing said doping impurity from said polycrystalline layer located at the area of said at least one window into said monocrystalline semiconductor material so that there is formed in said monocrystalline semiconductor material at least one semiconductor zone doped with said diffused impurity, (e) reducing the thickness of said doped polycrystalline semiconductor layer located in said window after the diffusion process and prior to providing a metal layer of an ohmic contact, and (f) providing said at least one semiconductor zone with an ohmic contact comprising a metal layer which is provided on said reduced polycrystalline material in said window.
Claim 2
Independent Claim
175 words
A method of manufacturing a semiconductor device, comprising the steps of: (a) providing a semiconductor body comprising a major surface and a monocrystalline semiconductor material located at said major surface, (b) providing a protective insulating layer on said monocrystalline material, said insulating layer having therein at least one window which gives access to said monocrystalline semiconductor material, (c) depositing at said major surface a layer of polycrystalline semiconductor material which comprises a doping impurity, (d) diffusing said doping impurity from said polycrystalline layer located at the area of said at least one window into said monocrystalline semiconductor material so that there is formed in said monocrystalline semiconductor material at least one semiconductor zone doped with said diffused impurity, (e) reducing the thickness of said doped polycrystalline semiconductor layer located in said window after the diffusion process and prior to providing a metal layer of an ohmic contact, and (f) providing said at least one semiconductor zone with an ohmic contact comprising a metal layer which is provided on said reduced polycrystalline material in said window.
Claim 3
Dependent Claim
33 words
A method as in claim 1, wherein polycrystalline semiconductor layer is restricted to at least one part which overlaps its associated respective window and laterally projects over the edge of said associated window.
Claim 4
Dependent Claim
61 words
A method as in claim 2, prior to providing said metal layer, the thickness of said polycrystalline semiconductor layer is reduced to a thickness smaller than one fifth of the thickness of a further layer to be provided and of the thinnest of further layers to be provided and further comprising the step of providing at least one such further layer.
Claim 5
Dependent Claim
30 words
A method as in claim 3, wherein at least one of said further layers consists of metal and is given a given pattern as a part of a multilayer wiring.
Claim 6
Dependent Claim
18 words
A method as in claim 3, wherein said polycrystalline semiconductor material is substantially saturated with said doping impurity.
Claim 7
Dependent Claim
17 words
A method as in claim 2, wherein said deposited polycrystalline semiconductor material consists essentially of doped silicon.
Claim 8
Dependent Claim
22 words
A method as in claim 2, wherein said monocrystalline semiconductor material located at said major surface of said semiconductor body is silicon.
Claim 9
Dependent Claim
17 words
A method as in claim 6, wherein said doping impurity in said polycrystalline semiconductor material is arsenic.
Claim 10
Dependent Claim
17 words
A method as in claim 6, wherein said doping impurity in said polycrystalline semiconductor material is phosphorus.
Claim 11
Dependent Claim
17 words
A method as in claim 6, wherein said doping impurity in said polycrystalline semiconductor material is boron.
Claim 12
Dependent Claim
13 words
A method as in claim 2, wherein said metal layer is of aluminum.
Claim 13
Dependent Claim
21 words
A method as claimed in claim 11, wherein said thickness of the provided aluminum layer is between 0.7 and 1.5 μm.
Claim 14
Dependent Claim
59 words
A method as in claim 2, wherein, prior to the formation of said at least one doped semiconductor zone in said monocrystalline semiconductor material, said polycrystalline semiconductor layer is provided in such a thickness that, after said diffusion at the area of said window, the quantity of doping impurity in said polycrystalline layer has decreased by at most three-fourths.
Claim 15
Dependent Claim
38 words
A method as in claim 2, wherein said layer of doped polycrystalline semiconductor material is deposited in a thickness which corresponds to at least one-fifth of the thickness of said doped semiconductor zone in the monocrystalline semiconductor material.
Claim 16
Dependent Claim
21 words
A method as in claim 2, wherein said doped polycrystalline semiconductor layer has a thickness of between 0.2 and 0.8 μm.
Claim 17
Dependent Claim
23 words
A method as in claim 15, wherein said layer of doped polycrystalline semiconductor material has a thickness of between 0.2 and 0.5 μm.
Claim 18
Dependent Claim
45 words
A method as in claim 2, wherein polycrystalline semiconductor layer is reduced in thickness to a thickness corresponding to 1 to 10 times the thickness of the part of the semiconductor material thereof which is dissolved in the metal layer upon forming the ohmic contact.
Claim 19
Dependent Claim
21 words
A method as in claim 2, wherein said polycrystalline semiconductor layer is reduced to a thickness between 0.03 and 0.2 μm.
Claim 20
Dependent Claim
22 words
A method as in claim 18, wherein the thickness of said polycrystalline semiconductor layer is reduced to between 0.05 and 0.15 μm.
Claim 21
Dependent Claim
29 words
A method as in claim 2, wherein said diffusion is carried out as that the thickness of said polycrystalline layer is reduced at least partly during the diffusion process.
Claim 22
Dependent Claim
17 words
A method as in claim 20, wherein the diffusion process is carried out in an oxidizing atmosphere.
Claim 23
Dependent Claim
25 words
A method as in claim 2, wherein the reduction in thickness of the polycrystalline semiconductor layer is carried out by etching after the diffusion process.
Claim 24
Dependent Claim
32 words
A method as in claim 2, wherein such reduction in thickness of the polycrystalline semiconductor layer after the diffusion process is carried out by erosion with a plasma in a diluted gas.
Claim 25
Dependent Claim
26 words
A method as in claim 2, wherein the reduction in thickness of the polycrystalline semiconductor layer after the diffusion process is carried out by anodic oxidation.
Claim 26
Independent Claim
212 words
A method of manufacturing a semiconductor device comprising the steps of: (a) providing a semiconductor body having a major surface and monocrystalline semiconductor material at said major surface, (b) providing on said monocrystalline material a protective insulation layer having therein at least one window which gives access to said monocrystalline semiconductor material, (c) deposited on said major surface accessible through said at least one window, a layer of polycrystalline semiconductor material which comprises a doping impurity, diffusing said doping impurity at said polycrystalline semiconductor layer at the area of said at least one window from said polycrystalline semicondutor into said monocrystalline semiconductor material so that at least one semiconductor zone doped with said diffused impurity is formed in said monocrystalline semiconductor material, (d) providing to said polycrystalline semiconductor layer a desired pattern which covers only part of said major surface and which covers entirely the portions of said monocrystalline semiconductor material exposed by said at least one window, (e) reducing the thickness of said polycrystalline semiconductor layer to a final thickness smaller than one fifth of the thickness of the hereinafter mentioned layer, and (f) then providing said at least one semiconductor zone with an ohmic contact comprising a metal layer which is provided on said reduced polycrystalline material in said window.
Claim 27
Independent Claim
212 words
A method of manufacturing a semiconductor device comprising the steps of: (a) providing a semiconductor body having a major surface and monocrystalline semiconductor material at said major surface, (b) providing on said monocrystalline material a protective insulation layer having therein at least one window which gives access to said monocrystalline semiconductor material, (c) deposited on said major surface accessible through said at least one window, a layer of polycrystalline semiconductor material which comprises a doping impurity, diffusing said doping impurity at said polycrystalline semiconductor layer at the area of said at least one window from said polycrystalline semicondutor into said monocrystalline semiconductor material so that at least one semiconductor zone doped with said diffused impurity is formed in said monocrystalline semiconductor material, (d) providing to said polycrystalline semiconductor layer a desired pattern which covers only part of said major surface and which covers entirely the portions of said monocrystalline semiconductor material exposed by said at least one window, (e) reducing the thickness of said polycrystalline semiconductor layer to a final thickness smaller than one fifth of the thickness of the hereinafter mentioned layer, and (f) then providing said at least one semiconductor zone with an ohmic contact comprising a metal layer which is provided on said reduced polycrystalline material in said window.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-13 | 1982-05-15 | 1982-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-13 | 1986-05-15 | 1986-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-13 | 1990-05-15 | 1990-11-14 | $7700.00 | Window Closed / Lapsed |