Patent US4113532A successfully refreshed from Google Patents.
US4113532A
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Process for producing large-size substrate-based semiconductor material utilizing vapor-phase deposition and subsequent resolidification
Assignee: Siltronic AG
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Filing: 1976-11-01
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Granted: 1978-09-12
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Expires: 1996-11-01
Abstract
Abstract A process for producing large-size, substrate-based semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 μm has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward. Large-sized plates obtained by cutting up the semiconductor material are used as solar cells.
Inventors
- 👤 Bernhard Authier
- 👤 Rudolf Griesshammer
- 👤 Franz Koppl
- 👤 Winfried Lang
- 👤 Erhard Sirtl
- 👤 Heinz-Jorg Rath
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 17:07
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; C; C30; C30B; C30B13/00; C30B13/06; C30B29/00; C30B29/60; H10F71/136; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/38; H10P14/3802; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S117/00; Y10S117/90; Y10S148/00; Y10S148/025; Y10S148/06; Y10S148/134; Y10S438/00; Y10S438/907
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
113 words
A process for producing large-size, substrate-based semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 μm has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upwardly to cause an oriented growth of the resolidifying silicon from the substrate body towards the free surface.
Claim 2
Dependent Claim
113 words
A process for producing large-size, substrate-based semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 μm has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upwardly to cause an oriented growth of the resolidifying silicon from the substrate body towards the free surface.
Claim 3
Dependent Claim
14 words
The process according to claim 1 wherein the substrate body is a graphite foil.
Claim 4
Dependent Claim
14 words
The process according to claim 1 wherein the substrate body is a molybdenum band.
Claim 5
Dependent Claim
21 words
The process according to claim 1 wherein an intermediate layer is applied to the substrate body before the silicon is deposited.
Claim 6
Dependent Claim
23 words
The process according to claim 1 wherein the gaseous compound from which the silicon is deposited is a mixture of trichlorosilane and hydrogen.
Claim 7
Dependent Claim
26 words
The process according to claim 1 wherein the silicon layer deposited from the gas phase is partially melted by a radiation source mounted above the same.
Claim 8
Dependent Claim
22 words
The process according to claim 6 wherein the main energy supply for the melting is delivered by heating up the substrate body.
Claim 9
Dependent Claim
49 words
The process according to claim 6 wherein the molten layer of silicon is resolidified and thereafter melted once more, whereupon a dopant is added to the melted surface layer causing the silicon to become doped in opposite conductivity to the dopant originally added in order to provide a pn-transition.
Claim 10
Dependent Claim
15 words
The process according to claim 1 wherein the steps are carried out in continuous operation.
Claim 11
Dependent Claim
23 words
The process according to claim 1 including the step of cutting the large-size semiconductor material into plates to be used as solar cells.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-09-11 | 1982-03-13 | 1982-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-09-11 | 1986-03-13 | 1986-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-09-11 | 1990-03-13 | 1990-09-12 | $7700.00 | Window Closed / Lapsed |